公开(公告)号：US20210249491A1

公开(公告)日：2021-08-12

申请号：US16952787

申请日：2020-11-19

Applicant: Samsung Display Co., LTD.

Inventor： June Hwan KIM ,  Tae Young KIM ,  Jong Woo PARK ,  Ki Ju IM ,  Ji Ho MOON ,  Hyun Cheol HWANG

IPC: H01L27/32 ,  G09G3/3233 ,  H01L51/56

Abstract: A display device includes an organic light emitting diode, a first transistor driving the organic light emitting diode, a second transistor transmitting a data signal to the first transistor, a third transistor transmitting a first power voltage to the first transistor, wherein a semiconductor pattern of the first transistor is disposed over a semiconductor pattern of the second transistor, a semiconductor pattern of the third transistor is disposed over the semiconductor pattern of the first transistor, a lower transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the second transistor, and an upper transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the third transistor.

公开(公告)号：US20200243006A1

公开(公告)日：2020-07-30

申请号：US16567578

申请日：2019-09-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyo Jung KIM ,  Tae Young KIM ,  Yong Sung Park ,  Jong Woo Park ,  Mi Seon SEO ,  Keun Soo LEE ,  Ki Ju IM ,  Dae Youn CHO ,  Young Tae CHOI ,  Hyun Cheol HWANG

IPC: G09G3/3233 ,  H01L27/32

Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.

公开(公告)号：US20240276858A1

公开(公告)日：2024-08-15

申请号：US18376823

申请日：2023-10-04

Applicant: Samsung Display Co., LTD.

Inventor： Kyong Tae PARK ,  Tae Young KIM ,  Dong So KIM ,  Jung Suk BAE ,  Sang Hoon LIM ,  Jong Chan LIM

IPC: H10K71/70 ,  H01L21/66

CPC classification number: H10K71/70 ,  H01L22/14

Abstract: An apparatus for fabricating a display panel includes: a sample module in which a switching transistor is formed, a measurement module having input/output terminals electrically connected to the switching transistor of the sample module, a characteristic detecting unit configured to detect primary operation characteristic information including an output current, an output voltage value and a threshold voltage range of the switching transistor, a model learning unit configured to correct at least one of the output current, the output voltage value and the threshold voltage range in the primary operation characteristic information using a learning program included in at least one learning model, and to extract correction results as learning result data, and a correction learning unit configured to classify the learning result data containing the primary operation characteristic information according to fabrication characteristics of sample switching transistors and a list of classifications.

公开(公告)号：US20220208923A1

公开(公告)日：2022-06-30

申请号：US17400274

申请日：2021-08-12

Applicant: Samsung Display Co., LTD.

Inventor： Yoon Ho KIM ,  Jong Woo PARK ,  June Hwan KIM ,  Tae Young KIM ,  Ki Ju IM ,  Eun Byul JO

IPC: H01L27/32 ,  H01L29/786 ,  H01L29/66

Abstract: A display device includes a substrate, a first semiconductor layer on the substrate and including an oxide semiconductor, a first gate insulating film on the first semiconductor layer, a first conductive layer on the first gate insulating film, a first interlayer insulating film on the first conductive layer, and a second conductive layer on the first interlayer insulating film and connected to the first semiconductor layer through a through-hole. The through-hole includes a first through-hole passing through the first interlayer insulating film, and a second through-hole overlapping the first through-hole and passing through the first semiconductor layer. The second conductive layer is in contact with a side surface of the first semiconductor layer exposed at the second through-hole.

公开(公告)号：US20210104558A1

公开(公告)日：2021-04-08

申请号：US16875770

申请日：2020-05-15

Applicant: Samsung Display Co., Ltd.

Inventor： June Hwan KIM ,  Tae Young KIM ,  Jong Woo PARK ,  Young Tae CHOI ,  Hyun Cheol HWANG ,  Ki Ju IM

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: A display device is provided. The display device comprises a substrate, a first buffer layer on the substrate, a first semiconductor layer on the first buffer layer and including a first active layer, a first gate insulating layer on the first semiconductor layer and the first buffer layer and covering the first active layer, a first conductive layer on the first gate insulating layer and including a first gate electrode, a second conductive layer on the first conductive layer and including a first source/drain electrode, a first interlayer insulating layer on the first conductive layer, a second semiconductor layer on the first interlayer insulating layer and including a second active layer, a second gate insulating layer on the second semiconductor layer and covering the second active layer, and a third conductive layer on the second gate insulating layer and including a second gate electrode and a second source/drain electrode, wherein the first gate insulating layer and the second gate insulating layer include different insulating materials.

公开(公告)号：US20200066826A1

公开(公告)日：2020-02-27

申请号：US16509455

申请日：2019-07-11

Applicant: Samsung Display Co., Ltd.

Inventor： Tae Young KIM ,  Jongwoo PARK ,  Youn Jae JUNG ,  Hyojung KIM

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/50

Abstract: A display device may include an insulation layer, a wire directly contacting the insulation layer, a first electrode overlapping the insulation layer, an organic light emitting layer positioned on the first electrode, and a second electrode positioned on the organic light emitting layer. The wire may include an aluminum alloy that includes at least one of copper, vanadium, and silicon. The first electrode may include silver.

公开(公告)号：US20230189567A1

公开(公告)日：2023-06-15

申请号：US18085076

申请日：2022-12-20

Applicant: Samsung Display Co., LTD.

Inventor： June Hwan KIM ,  Tae Young KIM ,  Jong Woo PARK ,  Ki Ju IM ,  Ji Ho MOON ,  Hyun Cheol HWANG

IPC: H10K59/121 ,  G09G3/3233 ,  H10K59/131 ,  H10K71/00

CPC classification number: H10K59/1213 ,  G09G3/3233 ,  H10K59/131 ,  H10K59/1216 ,  H10K71/00 ,  G09G2300/0809 ,  H01L29/66757

Abstract: A display device includes an organic light emitting diode, a first transistor driving the organic light emitting diode, a second transistor transmitting a data signal to the first transistor, a third transistor transmitting a first power voltage to the first transistor, wherein a semiconductor pattern of the first transistor is disposed over a semiconductor pattern of the second transistor, a semiconductor pattern of the third transistor is disposed over the semiconductor pattern of the first transistor, a lower transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the second transistor, and an upper transistor insulating film is disposed between the semiconductor pattern of the first transistor and the semiconductor pattern of the third transistor.

公开(公告)号：US20200033914A1

公开(公告)日：2020-01-30

申请号：US16408953

申请日：2019-05-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyo Jung KIM ,  Tae Young KIM ,  Jong Woo PARK ,  Dae Youn CHO ,  Ki Ju IM ,  Young Tae CHOI

IPC: G06F1/16 ,  H01L27/12 ,  H01L51/00

Abstract: A display device includes a flexible substrate, a display element on the flexible substrate and including a thin film transistor, a metal layer disposed at a lower portion of the flexible substrate, and an air layer formed between the flexible substrate and the metal layer.

公开(公告)号：US20190305055A1

公开(公告)日：2019-10-03

申请号：US16287389

申请日：2019-02-27

Applicant: Samsung Display Co., Ltd.

Inventor： June Hwan KIM ,  Tae Young KIM ,  Hyo Jung KIM

IPC: H01L27/32 ,  G09G3/3225

Abstract: A display device may include a first pixel including a first transistor, and a first light emitting element on and electrically connected to the first transistor, a second pixel adjacent the first pixel, the second pixel including a second transistor, and a second light emitting element on and electrically connected to the second transistor, and a reflective member at a layer that is above the first pixel and the second pixel, the reflective member being configured to reflect a light emitted from the second light emitting element to the first transistor.

公开(公告)号：US20240063229A1

公开(公告)日：2024-02-22

申请号：US18501953

申请日：2023-11-03

Applicant: Samsung Display Co., LTD.

Inventor： June Hwan KIM ,  Tae Young KIM ,  Jong Woo PARK ,  Young Tae CHOI ,  Hyun Cheol HWANG ,  Ki Ju IM

IPC: H01L27/12 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L27/1237 ,  H01L27/1218 ,  H01L27/1255 ,  H01L29/78675 ,  H01L29/7869 ,  H10K59/1213 ,  H10K59/1216

Abstract: A display device is provided. The display device comprises a substrate, a first buffer layer on the substrate, a first semiconductor layer on the first buffer layer and including a first active layer, a first gate insulating layer on the first semiconductor layer and the first buffer layer and covering the first active layer, a first conductive layer on the first gate insulating layer and including a first gate electrode, a second conductive layer on the first conductive layer and including a first source/drain electrode, a first interlayer insulating layer on the first conductive layer, a second semiconductor layer on the first interlayer insulating layer and including a second active layer, a second gate insulating layer on the second semiconductor layer and covering the second active layer, and a third conductive layer on the second gate insulating layer and including a second gate electrode and a second source/drain electrode, wherein the first gate insulating layer and the second gate insulating layer include different insulating materials.