公开(公告)号：US20140061632A1

公开(公告)日：2014-03-06

申请号：US13858584

申请日：2013-04-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Min-Jung LEE ,  Yoon-Ho Khang ,  Se-Hwan Yu ,  Yong-Su Lee ,  Jin-Young Shim ,  Ji-Seon Lee ,  Kwang-Young Choi

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/78633 ,  H01L29/78636 ,  H01L29/7869

Abstract: A thin film transistor substrate including a base substrate; an active pattern disposed on the base substrate and including a source electrode, a drain electrode, and a channel including an oxide semiconductor disposed between the source electrode and the drain electrode; a gate insulation pattern disposed on the active pattern; a gate electrode disposed on the gate insulation pattern and overlapping with the channel; and a light-blocking pattern disposed between the base substrate and the active pattern.

Abstract translation: 1.一种薄膜晶体管基板，包括基底基板; 设置在所述基底基板上的有源图案，包括源电极，漏电极和包括设置在所述源电极和所述漏电极之间的氧化物半导体的沟道; 设置在活动图案上的栅极绝缘图案; 栅电极，设置在栅极绝缘图案上并与沟道重叠; 以及设置在基底基板和活性图案之间的遮光图案。

公开(公告)号：US09252284B2

公开(公告)日：2016-02-02

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan Lee ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US20150060843A1

公开(公告)日：2015-03-05

申请号：US14182989

申请日：2014-02-18

Applicant: Samsung Display Co., Ltd.

Inventor： Jong-Chan LEE ,  Yoon-Ho Khang ,  Su-Hyoung Kang ,  Dong-Jo Kim ,  Ji-Seon Lee ,  Myoung-Geun Cha ,  Deuk-Myung Ji

IPC: H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78693

Abstract: A display substrate and a method for manufacturing a display substrate are disclosed. In the method, a gate electrode is formed on a base substrate. An active pattern is formed using an oxide semiconductor. The active pattern partially overlaps the gate electrode. A first insulation layer pattern and a second insulation layer pattern are sequentially formed on the active pattern. The first insulation layer pattern and the second insulation layer pattern overlap the gate electrode. A third insulation layer is formed to cover the active pattern, the first insulation layer pattern and the second insulation layer pattern. Either the first insulation layer pattern or the second insulation layer pattern includes aluminum oxide. Forming the first insulation layer pattern and the second insulation layer pattern includes performing a backside exposure process using the gate electrode as an exposure mask.

Abstract translation: 公开了显示基板和显示基板的制造方法。 在该方法中，在基底基板上形成栅电极。 使用氧化物半导体形成有源图案。 有源图案部分地与栅电极重叠。 在活性图案上依次形成第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案和第二绝缘层图案与栅电极重叠。 形成第三绝缘层以覆盖有源图案，第一绝缘层图案和第二绝缘层图案。 第一绝缘层图案或第二绝缘层图案都包括氧化铝。 形成第一绝缘层图案和第二绝缘层图案包括使用栅电极进行背面曝光处理作为曝光掩模。

公开(公告)号：US09666602B2

公开(公告)日：2017-05-30

申请号：US13828990

申请日：2013-03-14

Applicant: Samsung Display Co., LTD.

Inventor： Ji-Seon Lee ,  Dong-Jo Kim ,  Yoon-Ho Khang ,  Yong-Su Lee ,  Jong-Chan Lee

IPC: H01L33/08 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1222 ,  H01L27/124 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern.