INKJET PRINTING APPARATUS AND METHOD FOR INSPECTING INKJET HEAD USING SAME

    公开(公告)号:US20230055700A1

    公开(公告)日:2023-02-23

    申请号:US17904370

    申请日:2020-06-02

    Abstract: Provided are an inkjet printing apparatus and a method for inspecting an inkjet head using same. The inkjet printing apparatus comprises: an inspection stage unit on which an inspection substrate is seated; an inkjet head unit including at least one inkjet head that ejects ink containing dipoles and a solvent in which the dipoles disperse, on the inspection stage unit; and a particle count inspection unit that is located so as to be spaced apart from the inkjet head unit in one direction. The particle count inspection unit comprises: a first heat treatment unit that is located on the top portion of the inspection stage unit; and a first sensing unit that is located on the bottom portion of the inspection stage unit and measures the number of dipoles sprayed onto the inspection substrate.

    METHOD FOR CUTTING SUBSTRATE
    5.
    发明申请
    METHOD FOR CUTTING SUBSTRATE 有权
    切割基板的方法

    公开(公告)号:US20150108089A1

    公开(公告)日:2015-04-23

    申请号:US14324825

    申请日:2014-07-07

    Abstract: A method for cutting a substrate includes: radiating, as part of a first laser radiating process, a laser towards a surface of the substrate to form a first groove in a substrate. Radiating the laser towards the surface includes radiating, in sequence, the laser towards a first outer point (FOP), a second outer point (SOP), a first intermediate point (FIP), a second intermediate point (SIP), and a first cut point (FCP) of the surface, each of the points being spaced apart from one another by one or more distances. The FCP corresponds to a cut line of the substrate. The FOP and the SOP are respectively disposed at lateral sides of the FCP. The FIP is disposed between the FCP and the FOP. The SIP is disposed between the FCP and the SOP. The same kind and intensity of laser is radiated towards each of the points.

    Abstract translation: 一种用于切割衬底的方法包括:作为第一激光辐射处理的一部分,朝向衬底的表面辐射激光,以在衬底中形成第一凹槽。 朝向表面辐射激光包括依次将激光朝向第一外部点(FOP),第二外部点(SOP),第一中间点(FIP),第二中间点(SIP)和第一外部点 切割点(FCP),每个点彼此间隔开一个或多个距离。 FCP对应于基板的切割线。 FOP和SOP分别设置在FCP的侧面。 FIP位于FCP和FOP之间。 SIP位于FCP和SOP之间。 相同种类和强度的激光辐射到每个点。

    SPUTTERING APPARATUS AND METHOD FOR THIN FILM ELECTRODE DEPOSITION

    公开(公告)号:US20250029819A1

    公开(公告)日:2025-01-23

    申请号:US18910046

    申请日:2024-10-09

    Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

    SPUTTERING APPARATUS AND METHOD FOR THIN FILM ELECTRODE DEPOSITION

    公开(公告)号:US20230085216A1

    公开(公告)日:2023-03-16

    申请号:US17687961

    申请日:2022-03-07

    Abstract: A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.

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