公开(公告)号：US20240128201A1

公开(公告)日：2024-04-18

申请号：US18390051

申请日：2023-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/24 ,  H01Q1/40

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/645 ,  H01L23/66 ,  H01Q1/243 ,  H01Q1/40 ,  H01L2223/6677

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US12211803B2

公开(公告)日：2025-01-28

申请号：US18390051

申请日：2023-12-20

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498 ,  H01L23/552 ,  H01L23/64 ,  H01L23/66 ,  H01Q1/24 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US20230081706A1

公开(公告)日：2023-03-16

申请号：US17447336

申请日：2021-09-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/552 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.

公开(公告)号：US11894314B2

公开(公告)日：2024-02-06

申请号：US17447336

申请日：2021-09-10

Applicant: STATS ChipPAC Pte. Ltd.

Inventor： HunTeak Lee ,  Gwang Kim ,  Junho Ye ,  YouJoung Choi ,  MinKyung Kim ,  Yongwoo Lee ,  Namgu Kim

IPC: H01L23/52 ,  H01L23/552 ,  H01L23/31 ,  H01Q1/40 ,  H01L23/498 ,  H01L21/56

CPC classification number: H01L23/552 ,  H01L21/56 ,  H01L23/3128 ,  H01L23/49822 ,  H01Q1/40

Abstract: A semiconductor device has a substrate and an electrical component disposed over a surface of the substrate. An antenna interposer is disposed over the substrate. A first encapsulant is deposited around the antenna interposer. The first encapsulant has a high dielectric constant. The antenna interposer has a conductive layer operating as an antenna and an insulating layer having a low dielectric constant less than the high dielectric constant of the first encapsulant. The antenna interposer is made from an antenna substrate having a plurality of antenna interposers. Bumps are formed over the antenna substrate and the antenna substrate is singulated to make the plurality of antenna interposers. A second encapsulant is deposited over the electrical component. The second encapsulant has a low dielectric constant less than the high dielectric constant of the first encapsulant. A shielding layer is disposed over the second encapsulant.