公开(公告)号：US09924119B2

公开(公告)日：2018-03-20

申请号：US15582218

申请日：2017-04-28

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/369 ,  H04N5/3745 ,  H04N5/347 ,  H01L27/146

CPC classification number: H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US20170237920A1

公开(公告)日：2017-08-17

申请号：US15582218

申请日：2017-04-28

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/369 ,  H01L27/146 ,  H04N5/3745

CPC classification number: H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US11343452B2

公开(公告)日：2022-05-24

申请号：US16926278

申请日：2020-07-10

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/347

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US10659708B2

公开(公告)日：2020-05-19

申请号：US15878652

申请日：2018-01-24

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/347

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US20200339245A1

公开(公告)日：2020-10-29

申请号：US16926278

申请日：2020-07-10

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: B64C11/46 ,  B64C11/00 ,  B64C27/08 ,  B64C27/20 ,  B64C29/00

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US10700114B2

公开(公告)日：2020-06-30

申请号：US15737402

申请日：2017-04-11

Applicant: SONY CORPORATION

Inventor： Hideyuki Honda ,  Tetsuya Uchida ,  Toshifumi Wakano ,  Yusuke Tanaka ,  Yoshiharu Kudoh ,  Hirotoshi Nomura ,  Tomoyuki Hirano ,  Shinichi Yoshida ,  Yoichi Ueda ,  Kosuke Nakanishi

IPC: H01L27/146 ,  H01L21/76 ,  H04N5/365 ,  H04N5/378 ,  H04N5/376

Abstract: The present technology relates to a solid-state imaging element configured so that pixels can be more reliably separated, a method for manufacturing the solid-state imaging element, and an electronic apparatus. The solid-state imaging element includes a photoelectric converter, a first separator, and a second separator. The photoelectric converter is configured to perform photoelectric conversion of incident light. The first separator configured to separate the photoelectric converter is formed in a first trench formed from a first surface side. The second separator configured to separate the photoelectric converter is formed in a second trench formed from a second surface side facing a first surface. The present technology is applicable to an individual imaging element mounted on, e.g., a camera and configured to acquire an image of an object.

公开(公告)号：US20180152655A1

公开(公告)日：2018-05-31

申请号：US15878652

申请日：2018-01-24

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/369 ,  H04N5/3745 ,  H01L27/146 ,  H04N5/347

CPC classification number: H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US09641780B2

公开(公告)日：2017-05-02

申请号：US14528753

申请日：2014-10-30

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/3745 ,  H04N5/347 ,  H04N5/369 ,  H01L27/146

CPC classification number: H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

公开(公告)号：US20150124139A1

公开(公告)日：2015-05-07

申请号：US14528753

申请日：2014-10-30

Applicant: Sony Corporation

Inventor： Hiroaki Ishiwata ,  Hideo Kido ,  Norihiro Kubo ,  Tetsuya Uchida

IPC: H04N5/374 ,  H04N5/3745

CPC classification number: H04N5/3696 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14643 ,  H04N5/347 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device includes a pixel array unit in which a plurality of imaging pixels configured to generate an image, and a plurality of phase difference detection pixels configured to perform phase difference detection are arranged, each of the plurality of phase difference detection pixels including a plurality of photoelectric conversion units, a plurality of floating diffusions configured to convert charges stored in the plurality of photoelectric conversion units into voltage, and a plurality of amplification transistors configured to amplify the converted voltage in the plurality of floating diffusions.

Abstract translation: 固态成像装置包括像素阵列单元，其中配置有用于生成图像的多个成像像素和被配置为执行相位差检测的多个相位差检测像素，所述多个相位差检测像素 包括多个光电转换单元，将多个光电转换单元中存储的电荷转换为电压的多个浮置扩散，以及多个放大晶体管，其被配置为放大多个浮动扩散中的转换电压。