公开(公告)号：US20170317214A1

公开(公告)日：2017-11-02

申请号：US15370182

申请日：2016-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Toshiro NAKANISHI ,  Kab Jin NAM ,  Lijie ZHANG

IPC: H01L29/78 ,  H01L29/10

CPC classification number: H01L29/7853 ,  H01L29/1037 ,  H01L29/42392 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes a drain region and a source region spaced apart from each other, a semiconductor pattern disposed between the drain region and the source region and comprising a first region and a second region, wherein a thickness of the first region is larger than a thickness of the second region, and the first region is disposed between the drain region and the second region, and a gate electrode intersecting the semiconductor pattern.

公开(公告)号：US20220310654A1

公开(公告)日：2022-09-29

申请号：US17502380

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Do Young CHOI ,  Kab Jin NAM ,  In Bong POK ,  Dae Won HA ,  Musarrat HASAN

IPC: H01L27/11592 ,  H01L27/1159 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66

Abstract: A method of manufacturing a semiconductor device, the method including providing a substrate including a first region and a second region such that the second region is separated from the first region; forming a metal oxide film on the first region of the substrate and the second region of the substrate; forming an upper metal material film on the metal oxide film on the first region of the substrate such that the upper metal material film does not overlap the metal oxide film on the second region of the substrate; and simultaneously annealing the upper metal material film and the metal oxide film to form a ferroelectric insulating film on the first region of the substrate and form a paraelectric insulating film on the second region of the substrate.