公开(公告)号：US20240162120A1

公开(公告)日：2024-05-16

申请号：US18205814

申请日：2023-06-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kern RIM ,  Doo Hyun LEE ,  Heon Jong SHIN ,  Jin Young PARK

IPC: H01L23/48 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L23/481 ,  H01L29/0673 ,  H01L29/41733 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor device is provided. The semiconductor device includes first through third active patterns extending in and spaced apart from each other along a first direction on a first surface of a substrate; a first gate electrode extending in a second direction on the first active pattern; a first active cut between the first and second active patterns, wherein the first active cut extends in the second direction, and the first active cut is spaced apart from the first gate electrode in the first direction; a second active cut between the second and third active patterns, wherein the second active cut extends in the second direction, and the second active cut is spaced apart from the first active cut in the first direction; and a first through via extending vertically through the second active pattern between the first and second active cuts, and into the substrate.

公开(公告)号：US20200066856A1

公开(公告)日：2020-02-27

申请号：US16386475

申请日：2019-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun Seung SONG ,  Doo Hyun LEE ,  Yun Il LEE ,  Jae Ran JANG

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/78 ,  H01L21/285

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate including an active fin extending in a first direction; a gate structure extending in a second direction to intersect the active fin; a source/drain region on the active fin; a metal silicide layer on the source/drain region; a filling insulating portion on the metal silicide layer, the filling insulating portion having a contact hole connected to a portion of the metal silicide layer; a protective barrier layer between the metal silicide layer and the filing insulating portion; and a contact plug in the contact hole and electrically connected to the portion of the metal silicide layer.