公开(公告)号：US10937700B2

公开(公告)日：2021-03-02

申请号：US15583167

申请日：2017-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mirco Cantoro ,  Yun-Il Lee ,  Hyung-Suk Lee ,  Yeon-Cheol Heo ,  Byoung-Gi Kim ,  Chang-Min Yoe ,  Seung-Chan Yun ,  Dong-Hun Lee

IPC: H01L27/082 ,  H01L27/24 ,  H01L27/115 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L21/84 ,  H01L29/786 ,  H01L27/088 ,  H01L29/161 ,  H01L29/24 ,  H01L29/267 ,  H01L29/78

Abstract: A semiconductor device includes a first semiconductor pattern doped with first impurities on a substrate, a first channel pattern on the first semiconductor pattern, second semiconductor patterns doped with second impurities contacting upper edge surfaces, respectively, of the first channel pattern, and a first gate structure surrounding at least a portion of a sidewall of the first channel pattern.

公开(公告)号：US11282835B2

公开(公告)日：2022-03-22

申请号：US16735984

申请日：2020-01-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yong Kwon ,  Byoung-Gi Kim ,  Ki Hwan Lee ,  Jung Han Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

公开(公告)号：US11670636B2

公开(公告)日：2023-06-06

申请号：US17577549

申请日：2022-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Yong Kwon ,  Byoung-Gi Kim ,  Ki Hwan Lee ,  Jung Han Lee

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L21/823431 ,  H01L29/6681 ,  H01L29/7851

Abstract: A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

公开(公告)号：US11211497B2

公开(公告)日：2021-12-28

申请号：US16848145

申请日：2020-04-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Gun You ,  Dong Hyun Kim ,  Byoung-Gi Kim ,  Yun Suk Nam ,  Yeong Min Jeon ,  Sung Chui Park ,  Dae Won Ha

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/762 ,  H01L23/532 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes first and second fin patterns on a substrate and extending apart from each other, a field insulating film on the substrate and surrounding parts of the first and second fin patterns, a first gate structure on the first fin pattern and intersecting the first fin pattern, a second gate structure on the second fin pattern and intersecting the second fin pattern, and a separating structure protruding from a top surface of the field insulating film and separating the first and second gate structures, the field insulating film and the separating structure including a same insulating material.