Display device and method for repairing display device

    公开(公告)号:US12185618B2

    公开(公告)日:2024-12-31

    申请号:US17485729

    申请日:2021-09-27

    Abstract: A display device includes: an array of pixels disposed on a display area; a connection pad disposed on a pad area; a transmission line electrically coupled with the connection pad; and a conductive dummy pattern disposed under the transmission line. A part of the conductive dummy pattern overlaps the transmission line in a plan view. The transmission line transmits a driving signal or a power signal to the array of pixels. The connection pad includes a pad conductive layer electrically coupled with the transmission line, and a passivation layer disposed on the pad conductive layer. The passivation layer covers at least a side surface of the pad conductive layer and defines an opening overlapping the conductive dummy pattern and the transmission line in the plan view.

    Display device
    2.
    发明授权

    公开(公告)号:US12148871B2

    公开(公告)日:2024-11-19

    申请号:US17565088

    申请日:2021-12-29

    Abstract: A display device includes a driving element disposed in a display area, an emission element disposed in the display area and electrically connected to the driving element, and a connection pad disposed in a pad area adjacent to the display area and electrically connected to the driving element. The connection pad includes a first pad conductive layer including a metal and a second pad conductive layer including indium tin zinc oxide (ITZO). The indium tin zinc oxide of the second pad conductive layer includes about 20 at % to about 35 at % of indium (In), about 2 at % to about 20 at % of zinc (Zn), about 4 at % to about 6 at % of tin (Sn), and a remainder of oxygen (O).

    DISPLAY DEVICE
    3.
    发明申请

    公开(公告)号:US20210028272A1

    公开(公告)日:2021-01-28

    申请号:US16886876

    申请日:2020-05-29

    Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

    Display device
    4.
    发明授权

    公开(公告)号:US11716886B2

    公开(公告)日:2023-08-01

    申请号:US17410274

    申请日:2021-08-24

    CPC classification number: H10K59/131 H10K59/1213 H01L27/1225

    Abstract: A display device includes a lower electrode extending in a first direction and a first active layer disposed on the lower electrode and extending in a second direction perpendicular to the first direction. The first active layer includes a first area having a first width in the first direction, a second area having a second width wider than the first width in the first direction, and overlapping the lower electrode and a third area between the first area and the second area and connecting the first area to the second area.

    Display device including pad arranged in peripheral area

    公开(公告)号:US11302771B2

    公开(公告)日:2022-04-12

    申请号:US16886876

    申请日:2020-05-29

    Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

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