公开(公告)号：US20150128700A1

公开(公告)日：2015-05-14

申请号：US14536918

申请日：2014-11-10

Applicant: Robert Bosch GmbH

Inventor： Reinhard NEUL

IPC: G01C19/5705

CPC classification number: G01C19/5726 ,  G01C19/574

Abstract: A rotation rate sensor includes a substrate having a main extension plane and multiple seismic masses, in which for each seismic mass the following applies: the seismic mass is drivable at a drive oscillation, which occurs along a drive direction situated parallel to the main extension plane, the seismic mass is deflectable along two different deflection directions, each direction being perpendicular to the drive direction, the rotation rate sensor being configured to generate detection signals as a function of detected deflections of the seismic masses, one detection signal of the detection signals being associated with each deflection direction of the seismic masses, the rotation rate sensor being configured so that a linear, rotational and centrifugal acceleration of the rotation rate sensor are compensated with respect to at least one rotation axis of the rotation rate sensor through compensation in each case of two corresponding detection signals of the detection signals.

Abstract translation: 旋转速率传感器包括具有主延伸面和多个地震质量的基底，其中对于每个地震质量，以下适用：地震质量可在沿与主延伸平面平行的驱动方向发生的驱动振荡下驱动 所述地震质量沿着两个不同的偏转方向可偏转，每个方向垂直于所述驱动方向，所述旋转速率传感器被配置为产生作为所述地震质量的检测偏转的函数的检测信号，所述检测信号的一个检测信号为 与所述地震质量的每个偏转方向相关联，所述旋转速率传感器被构造成使得所述旋转速率传感器的线性，旋转和离心加速度相对于所述旋转速率传感器的至少一个旋转轴线通过每种情况下的补偿被补偿 的检测信号的两个相应的检测信号。

公开(公告)号：US20150353345A1

公开(公告)日：2015-12-10

申请号：US14731695

申请日：2015-06-05

Applicant: Robert Bosch GmbH

Inventor： Friedjof HEUCK ,  Ralf REICHENBACH ,  Daniel Christoph MEISEL ,  Lars TEBJE ,  Mirko HATTASS ,  Jochen REINMUTH ,  Torsten KRAMER ,  Johannes CLASSEN ,  Reinhard NEUL ,  Antoine PUYGRANIER

IPC: B81B7/00

CPC classification number: B81B7/0016 ,  B81B7/0054 ,  B81B2207/017 ,  B81C2203/0785 ,  H01L2224/16225 ,  H01L2224/73253

Abstract: Method for on-chip stress decoupling to reduce stresses in a vertical hybrid integrated component including MEMS and ASIC elements and to mechanical decoupling of the MEMS structure. The MEMS/ASIC elements are mounted above each other via at least one connection layer and form a chip stack. On the assembly side, at least one connection area is formed for the second level assembly and for external electrical contacting of the component on a component support. At least one flexible stress decoupling structure is formed in one element surface between the assembly side and the MEMS layered structure including the stress-sensitive MEMS structure, in at least one connection area to the adjacent element component of the chip stack or to the component support, the stress decoupling structure being configured so that the connection material does not penetrate into the stress decoupling structure and flexibility of the stress decoupling structure is ensured.

Abstract translation: 用于片上应力去耦的方法，以减少包括MEMS和ASIC元件在内的垂直混合集成组件中的应力以及MEMS结构的机械解耦。 MEMS / ASIC元件经由至少一个连接层彼此上方安装并形成芯片堆叠。 在组装侧上，形成用于第二级组件的至少一个连接区域以及用于部件支撑件上的部件的外部电接触。 至少一个柔性应力解耦结构形成在组件侧和MEMS分层结构之间的一个元件表面中，包括应力敏感MEMS结构，至少与芯片堆叠的相邻元件部件的连接区域或组件支撑件 应力解耦结构被构造成使得连接材料不会渗透到应力解耦结构中，并且确保了应力解耦结构的柔性。