公开(公告)号：US20160093511A1

公开(公告)日：2016-03-31

申请号：US14496365

申请日：2014-09-25

Applicant: QUALCOMM Incorporated

Inventor： Samit SENGUPTA ,  Shashank EKBOTE ,  Da YANG ,  Choh Fei YEAP

IPC: H01L21/3213 ,  H01L21/762 ,  H01L27/088

CPC classification number: H01L21/32139 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886

Abstract: A multigate transistor device such as a fin-shaped field effect transistor (FinFET) is fabricated by applying a self-aligned diffusion break (SADB) mask having an opening positioned to expose an area of at least one portion of at least one gate stripe designated as at least one tie-off gate in the multigate transistor device and removing the tie-off gate through the opening of the SADB mask to isolate transistors adjacent to the tie-off gate.

Abstract translation: 通过施加具有开口的自对准扩散断裂（SADB）掩模来制造诸如鳍状场效应晶体管（FinFET）的多栅晶体管器件，所述掩模被定位成暴露指定的至少一个栅极条的至少一部分的区域 作为多栅极晶体管器件中的至少一个截止栅极，并且通过SADB掩模的开口去除关断栅极，以隔离与截止栅极相邻的晶体管。