公开(公告)号：US20230352583A1

公开(公告)日：2023-11-02

申请号：US17661221

申请日：2022-04-28

Applicant: QUALCOMM Incorporated

Inventor： Abhijeet PAUL ,  Ravi Pramod Kumar VEDULA ,  Hyunchul JUNG

IPC: H01L29/78 ,  H01L29/66 ,  H03F3/21

CPC classification number: H01L29/7835 ,  H01L29/66492 ,  H03F3/211 ,  H03F2200/294 ,  H03F2200/451

Abstract: Disclosed is a transistor of a device that has an asymmetric resistance or an asymmetric capacitive coupling or both. When used in a cascode configuration in an amplifier, low current performance of the amplifier is improved. Asymmetric resistance may be enabled through differentially doping source and drain structures of the transistor and/or through differentially manipulating geometries the source and drain structures. Asymmetric capacitive coupling may be enabled through providing dielectrics and differentially locating the dielectrics above a gate of the transistor. Further, a body of the transistor may be biased.

公开(公告)号：US20250072059A1

公开(公告)日：2025-02-27

申请号：US18455500

申请日：2023-08-24

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

Abstract: A radio frequency (RF) device is described. The RF device includes a semiconductor-on-insulator (SOI) substrate having a first-type diffusion region. The RF device also includes a transistor including a source region and a drain region in the first-type diffusion region, a gate region between the source region and the drain region, and a body region. The RF device further includes a second-type diffusion region, comprising a gate overlap region partially overlapped by the gate region to define the body region and a second-type diffusion encroachment region in the source region and adjoining the gate overlap region to form a body terminal region, in which a silicidation layer shorts the body terminal region to the source region.

公开(公告)号：US20240063790A1

公开(公告)日：2024-02-22

申请号：US18104409

申请日：2023-02-01

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H03K17/687

CPC classification number: H03K17/6872 ,  H03K17/6874 ,  H03K2217/0036

Abstract: A radio frequency (RF) device is described. The RF device includes a switch field effect transistor (FET), having a source region, a drain region, a body region, and a gate region. The RF device also includes a dynamic bias control circuit. The dynamic bias control circuit includes a first transistor coupled to the gate region of the switch FET by a gate resistor. The dynamic bias control circuit also includes a second transistor coupled to the first transistor and coupled to the body region of the switch FET by a body resistor. The dynamic bias control circuit further includes a capacitor coupled to the body region of the switch FET by the body resistor, and the gate region of the switch FET, by the gate resistor.

公开(公告)号：US20240063787A1

公开(公告)日：2024-02-22

申请号：US17892800

申请日：2022-08-22

Applicant: QUALCOMM Incorporated

Inventor： Ravi Pramod Kumar VEDULA ,  Abhijeet PAUL ,  Hyunchul JUNG

IPC: H03K17/687

CPC classification number: H03K17/687 ,  H01L27/1203

Abstract: A radio frequency integrated circuit (RFIC) is described. The RFIC includes a switch field effect transistor (FET). The switch FET includes a source region, a drain region, a body region, and a gate region. The RFIC also includes a dynamic bias control circuit. The dynamic bias control circuit includes at least one transistor coupled between the body region and the gate region of the switch FET.