Abstract:
A method of memory array and link error correction in a low power memory sub-system includes embedding error correction code (ECC) parity bits within unused data mask bits during a normal write operation and during a read operation. The method also includes embedding the ECC parity bits in a mask write data byte corresponding to an asserted data mask bit during a mask write operation.
Abstract:
Writing to and reading from dynamic random access memory (DRAM) by a system on chip (SoC) over a multiphase multilane memory bus has power consumption optimized based on bit error rate (BER) and one or more thresholds. The bit error rate (BER) may be measured and used to control parameters to achieve optimal balance between power consumption and accuracy. The bit error rate (BER) measurement, purposely adding jitter, and checking against the thresholds is performed during normal mission-mode operation with live traffic. Error detection may cover every memory data transaction that has a block of binary data.
Abstract:
A clock is distributed to a processor-side base mode clocked transceiver and to a memory-side base mode clocked transceiver, interfacing respective ends of a data lane between a processor and the memory, for duplex communicating over the data lane. Concurrent with the duplex communicating, a bandwidth mode switches between a base bandwidth mode and a scale-up mode. The scale-up mode enables scale-up clock lines that distribute the clock to a processor-side scale-up transceiver and to a memory-side scale-up transceiver, interfacing respective ends of a scale-up data lane between the processor and the memory, for additional duplex communicating over the scale-up data lane. The base bandwidth mode disables the scale-up clock lines, which disables communicating over the scale-up data lane.
Abstract:
A memory sub-system may include a memory controller having error correction code (ECC) encoder/decoder logic. The memory controller may be configured to embed link ECC parity bits in unused data mask bits and/or in a mask write data during a mask write operation. The memory controller may also be configured to protect at least a location of the link ECC parity bits during the mask write operation.
Abstract:
A memory device may include link error correction code (ECC) decoder and correction circuitry. The ECC decoder and correction circuitry may be arranged in a write path and configured for link error detection and correction of write data received over a data link. The memory device may also include memory ECC encoder circuitry. The memory ECC encoder circuitry may be arranged in the write path and configured for memory protection of the write data during storage in a memory array.