公开(公告)号：US20150228795A1

公开(公告)日：2015-08-13

申请号：US14179311

申请日：2014-02-12

Applicant: QUALCOMM Incorporated

Inventor： Bin YANG ,  Xia LI ,  Chidi CHIDAMBARAM ,  Choh Fei YEAP

IPC: H01L29/78 ,  H03K17/687 ,  H01L29/66 ,  H01L29/267 ,  H01L29/06

CPC classification number: H01L29/7855 ,  H01L29/0607 ,  H01L29/267 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/7851 ,  H03K17/687 ,  H03K2017/6878 ,  H03K2217/0018 ,  H03K2217/0054

Abstract: A FinFET having a backgate and a barrier layer beneath the fin channel of the FinFET, where the barrier layer has a bandgap greater than that of the backgate. The barrier layer serves as an etch stop layer under the fin channel, resulting in reduced fin channel height variation. The backgate provides improved current control. There is less punchthrough due to the higher bandgap barrier layer. The FinFET may also include deeply embedded stressors adjacent to the source/drain diffusions through the high bandgap barrier layer.

Abstract translation: 在FinFET的鳍通道下方具有背栅和阻挡层的FinFET，其中阻挡层的带隙大于背栅的带隙。 阻挡层在翅片通道下面用作蚀刻停止层，从而减少了翅片通道高度变化。 后门提供改进的电流控制。 由于较高的带隙阻挡层，穿孔较少。 FinFET还可以包括通过高带隙势垒层与源极/漏极扩散相邻的深埋入的应力源。