REDUCING LATENCY IN PSEUDO CHANNEL BASED MEMORY SYSTEMS

    公开(公告)号:US20240111424A1

    公开(公告)日:2024-04-04

    申请号:US18527713

    申请日:2023-12-04

    CPC classification number: G06F3/0611 G06F3/0635 G06F3/0679

    Abstract: Various embodiments include methods and devices for reducing latency in pseudo channel based memory systems. Embodiments may include a first pseudo channel selection device configured to selectively communicatively connect one of a plurality of pseudo channels to a first input/output (IO), and a second pseudo channel selection device configured to selectively communicatively connect one of the plurality of pseudo channels to a second IO, in which the first pseudo channel selection device and the second pseudo channel selection device may be operable to communicatively connect a first pseudo channel of the plurality of pseudo channels to the first IO and to the second IO concurrently. Embodiments may include the pseudo channel based memory system configured to receive a memory access command targeting the first pseudo channel, and use a first pseudo channel data bus and a second pseudo channel data bus to implement the memory access command.

    Self-Characterizing, Evaluating, and Adaptive High Performance Memory Controller

    公开(公告)号:US20250028445A1

    公开(公告)日:2025-01-23

    申请号:US18354525

    申请日:2023-07-18

    Abstract: Various embodiments include systems and methods for improving the efficiency of a memory subsystem in a computing device. The memory subsystem may be configured to detect memory access events and determining their associated timings and determine an efficiency of the memory subsystem based on operational parameters of the memory subsystem, the detecting memory access events, and associated timings. The memory subsystem may adjust the operational parameters of the memory subsystem based on the determined efficiency of the memory subsystem. The memory subsystem may dynamically modify the operations of the memory subsystem based on the adjusted operational parameters.

    Reducing Latency In Pseudo Channel Based Memory Systems

    公开(公告)号:US20230136996A1

    公开(公告)日:2023-05-04

    申请号:US17452606

    申请日:2021-10-28

    Abstract: Various embodiments include methods and devices for reducing latency in pseudo channel based memory systems. Embodiments may include a first pseudo channel selection device configured to selectively communicatively connect one of a plurality of pseudo channels to a first input/output (IO), and a second pseudo channel selection device configured to selectively communicatively connect one of the plurality of pseudo channels to a second IO, in which the first pseudo channel selection device and the second pseudo channel selection device may be operable to communicatively connect a first pseudo channel of the plurality of pseudo channels to the first IO and to the second IO concurrently. Embodiments may include the pseudo channel based memory system configured to receive a memory access command targeting the first pseudo channel, and use a first pseudo channel data bus and a second pseudo channel data bus to implement the memory access command.

    Flexible Dual Ranks Memory System To Boost Performance

    公开(公告)号:US20240078202A1

    公开(公告)日:2024-03-07

    申请号:US17929946

    申请日:2022-09-06

    CPC classification number: G06F13/1694 G06F12/0623

    Abstract: Various embodiments include methods for implementing flexible ranks in a memory system. Embodiments may include receiving, at a memory controller, a first memory access command and a first address at which to implement the first memory access command in a logical rank, generating, by the memory controller, a first signal configured to indicate to a first memory device of the logical rank to implement the first memory access command via a first partial channel, sending, from the memory controller, the first signal to the first memory device, generating, by the memory controller, a second signal configured to indicate to a second memory device of the logical rank that is different from the first memory device to implement the first memory access command via a second partial channel, and sending, from the memory controller, the second signal to the second memory device.

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