公开(公告)号：US20220129200A1

公开(公告)日：2022-04-28

申请号：US17445220

申请日：2021-08-17

Applicant: QUALCOMM Incorporated

Inventor： Victor VAN DER VEEN ,  Mosaddiq SAIFUDDIN ,  Pankaj DESHMUKH ,  Behnam DASHTIPOUR ,  David HARTLEY

IPC: G06F3/06

Abstract: A DRAM memory controller is provided that identifies a marker command directed to a given row in a DRAM. If a threshold probability is satisfied in response to an identification of the marker command, the DRAM memory controller commands the DRAM to refresh a neighboring row in the DRAM. The neighboring row may be a neighboring of the given row or of a recently-closed row.

公开(公告)号：US20240087639A1

公开(公告)日：2024-03-14

申请号：US17940430

申请日：2022-09-08

Applicant: QUALCOMM INCORPORATED

Inventor： Victor VAN DER VEEN ,  Pankaj DESHMUKH ,  Behnam DASHTIPOUR ,  David HARTLEY

IPC: G11C11/4078 ,  G11C11/406

CPC classification number: G11C11/4078 ,  G11C11/40611 ,  G11C11/40618

Abstract: Mitigating or managing an effect known as “rowhammer” upon a DRAM device may include a memory controller receiving an activation count threshold value from the DRAM device. The memory controller may detect row activation commands directed to the DRAM device and count the number of the row activation commands. The memory controller may send a mitigative refresh command to the DRAM device based on the result of comparing the counted number of row activation commands with the received activation count threshold value.

公开(公告)号：US20190056879A1

公开(公告)日：2019-02-21

申请号：US16103670

申请日：2018-08-14

Applicant: QUALCOMM Incorporated

Inventor： James HUDSON ,  Behnam DASHTIPOUR

IPC: G06F3/06

Abstract: In some examples of the disclosure, a parameter override mechanism may include a variable length configuration data table with entries for specific models of memory devices. The configuration data table entries may include override parameters for different memory devices and may be dynamically updated with new entries and modifications of existing entries. The parameter override mechanism may be configured to automatically detect a model of memory device and select a corresponding configuration data table entry based on the detected model of memory device or restrict the use of a configuration data table entry based on the detected model of memory device.