公开(公告)号：US20150009615A1

公开(公告)日：2015-01-08

申请号：US14056958

申请日：2013-10-18

Applicant: Phison Electronics Corp.

Inventor： Chih-Jen Hsu ,  Chun-Feng Lee

IPC: H05K1/11 ,  G06F1/18

CPC classification number: H05K1/111 ,  H05K1/0295 ,  H05K2201/10492

Abstract: A pad structure for disposing an electronic component on a printed circuit board is provided. The pad structure includes a first pad and a plurality of second pads. The first pad is configured to couple to a terminal of the electronic component. Each of the second pads is configured to couple to another terminal of the electronic component. The first pad and the second pads are electrically independent to each other, and the second pads are electrically independent to each other. Besides, a printed circuit board and a memory storage device using the pad structure are also provided.

Abstract translation: 提供了一种用于在电路板上布置电子部件的焊盘结构。 垫结构包括第一垫和多个第二垫。 第一焊盘被配置为耦合到电子部件的端子。 每个第二焊盘被配置成耦合到电子部件的另一个端子。 第一焊盘和第二焊盘彼此电独立，并且第二焊盘彼此电独立。 此外，还提供了使用该垫结构的印刷电路板和存储器存储装置。

公开(公告)号：US09310869B2

公开(公告)日：2016-04-12

申请号：US14462569

申请日：2014-08-19

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chih-Jen Hsu ,  Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen

IPC: G11C16/30 ,  G06F1/26 ,  G06F13/42

CPC classification number: G06F1/266 ,  G06F1/20 ,  G06F1/26 ,  G06F13/4221 ,  G11C16/30

Abstract: A memory storage device, a memory control circuit unit and a power supply method are provided. The power supply method includes: providing a first power voltage to a host interface circuit of the memory storage device; providing a second power voltage to a memory management circuit of the memory storage device; providing a third power voltage to a memory interface circuit of the memory storage device, wherein a reference voltage terminal of the memory interface circuit is coupled to a power input terminal of the memory management circuit. Thus, the overheat problem of the memory storage device due to the voltage conversion may be improved.

Abstract translation: 提供存储器存储装置，存储器控制电路单元和电源方法。 电源方法包括：向存储器存储装置的主机接口电路提供第一电源电压; 向所述存储器存储设备的存储器管理电路提供第二电源电压; 向所述存储器存储装置的存储器接口电路提供第三电源电压，其中所述存储器接口电路的参考电压端子耦合到所述存储器管理电路的电源输入端子。 因此，可以提高由于电压转换引起的存储器存储装置的过热问题。

公开(公告)号：US20150323969A1

公开(公告)日：2015-11-12

申请号：US14462569

申请日：2014-08-19

Applicant: PHISON ELECTRONICS CORP.

Inventor： Chih-Jen Hsu ,  Hsiang-Hsiung Yu ,  Ta-Chuan Wei ,  Yun-Chieh Chen

IPC: G06F1/26 ,  G06F13/42

CPC classification number: G06F1/266 ,  G06F1/20 ,  G06F1/26 ,  G06F13/4221 ,  G11C16/30

Abstract: A memory storage device, a memory control circuit unit and a power supply method are provided. The power supply method includes: providing a first power voltage to a host interface circuit of the memory storage device; providing a second power voltage to a memory management circuit of the memory storage device; providing a third power voltage to a memory interface circuit of the memory storage device, wherein a reference voltage terminal of the memory interface circuit is coupled to a power input terminal of the memory management circuit. Thus, the overheat problem of the memory storage device due to the voltage conversion may be improved.

Abstract translation: 提供存储器存储装置，存储器控制电路单元和电源方法。 电源方法包括：向存储器存储装置的主机接口电路提供第一电源电压; 向所述存储器存储设备的存储器管理电路提供第二电源电压; 向所述存储器存储装置的存储器接口电路提供第三电源电压，其中所述存储器接口电路的参考电压端子耦合到所述存储器管理电路的电源输入端子。 因此，可以提高由于电压转换引起的存储器存储装置的过热问题。