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公开(公告)号：US12236364B2
公开(公告)日：2025-02-25
申请号：US18369221
申请日：2023-09-18
Applicant: NOVA LTD
Inventor： Eitan Rothstein , Ilya Rubinovich , Noam Tal , Barak Bringoltz , Yongha Kim , Ariel Broitman , Oded Cohen , Eylon Rabinovich , Tal Zaharoni , Shay Yogev , Daniel Kandel
Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
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Patent Agency Ranking
公开(公告)号：US11763181B2
公开(公告)日：2023-09-19
申请号：US17400157
申请日：2021-08-12
Applicant: NOVA LTD
Inventor： Eitan Rothstein , Ilya Rubinovich , Noam Tal , Barak Bringoltz , Yongha Kim , Ariel Broitman , Oded Cohen , Eylon Rabinovich , Tal Zaharoni , Shay Yogev , Daniel Kandel
CPC classification number: G06N5/04 , G01B11/06 , G03F7/705 , G03F7/70616 , G06N20/00 , H01L21/681 , H01L22/26 , G01B2210/56
Abstract: A semiconductor metrology system including a spectrum acquisition tool for collecting, using a first measurement protocol, baseline scatterometric spectra on first semiconductor wafer targets, and for various sources of spectral variability, variability sets of scatterometric spectra on second semiconductor wafer targets, the variability sets embodying the spectral variability, a reference metrology tool for collecting, using a second measurement protocol, parameter values of the first semiconductor wafer targets, and a training unit for training, using the collected spectra and values, a prediction model using machine learning and minimizing an associated loss function incorporating spectral variability terms, the prediction model for predicting values for production semiconductor wafer targets based on their spectra.
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公开(公告)号：US20240068964A1
公开(公告)日：2024-02-29
申请号：US18260036
申请日：2021-12-30
Applicant: NOVA LTD.
Inventor： Shahar Gov , Daniel Kandel , Heath POIS , Parker Lund , Michal Haim YACHINI , Vladimir Machavariani
IPC: G01N23/20
CPC classification number: G01N23/20
Abstract: A method, a system, and a non-transitory computer readable medium for evaluating x-ray signals. The method may include calculating an estimated field for each of multiple non-perturbed objects, the multiple non-perturbed objects represent perturbances of the perturbed object; the perturbances are of an order of a wavelength of the non-diffused x-ray signals; and evaluating the non-diffused x-ray signals based on the field of the multiple non-perturbed objects.
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公开(公告)号：US11710616B2
公开(公告)日：2023-07-25
申请号：US17722421
申请日：2022-04-18
Applicant: NOVA LTD
Inventor： Vladimir Machavariani , Michael Shifrin , Daniel Kandel , Victor Kucherov , Igor Ziselman , Ronen Urenski , Matthew Sendelbach
CPC classification number: H01J37/26 , G06T7/0006 , G06T7/0008 , G06T7/251 , G06T7/60 , G06T15/205 , H01J37/222 , G06T2207/10061 , G06T2207/20076 , H01J2237/221 , H01J2237/24592
Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.
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公开(公告)号：US11450541B2
公开(公告)日：2022-09-20
申请号：US16650405
申请日：2018-08-29
Applicant: NOVA LTD.
Inventor： Vladimir Machavariani , Michael Shifrin , Daniel Kandel , Victor Kucherov , Igor Ziselman , Ronen Urenski , Matthew Sendelbach
Abstract: A metrology method for use in determining one or more parameters of a patterned structure, the method including providing raw measured TEM image data, TEMmeas, data indicative of a TEM measurement mode, and predetermined simulated TEM image data including data indicative of one or more simulated TEM images of a structure similar to the patterned structure under measurements and a simulated weight map including weights assigned to different regions in the simulated TEM image corresponding to different features of the patterned structure, performing a fitting procedure between the raw measured TEM image data and the predetermined simulated TEM image data and determining one or more parameters of the structure from the simulated TEM image data corresponding to a best fit condition.
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公开(公告)号：US11309162B2
公开(公告)日：2022-04-19
申请号：US17170938
申请日：2021-02-09
Applicant: NOVA LTD.
Inventor： Vladimir Machavariani , Michael Shifrin , Daniel Kandel , Victor Kucherov , Igor Ziselman , Ronen Urenski , Matthew Sendelbach
Abstract: A metrology method for use in determining one or more parameters of a three-dimensional patterned structure, the method including performing a fitting procedure between measured TEM image data of the patterned structure and simulated TEM image data of the patterned structure, determining a measured Lamellae position of at least one measured TEM image in the TEM image data from a best fit condition between the measured and simulated data, and generating output data indicative of the simulated TEM image data corresponding to the best fit condition to thereby enable determination therefrom of the one or more parameters of the structure.
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