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    DIGITAL PIXEL SENSOR
    2.
    发明申请
    DIGITAL PIXEL SENSOR 有权

    公开(公告)号：US20230092325A1

    公开(公告)日：2023-03-23

    申请号：US17931001

    申请日：2022-09-09

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Tsung-Hsun Tsai ,  Song Chen ,  Lyle David Bainbridge ,  Xinqiao Liu

    IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355 ,  H04N5/3745 ,  G02B27/01

    Abstract: In one example, an apparatus comprises a first photodiode, a second photodiode, a first floating diffusion, a second floating diffusion, a quantizer, and a controller. The controller can enable the first photodiode and the second photodiode to generate and accumulate photo charge within an exposure period, and use the quantizer to quantize reset voltages at the first floating diffusion and at the second floating diffusion to generate a first digital reset value and a second digital reset value. After the exposure period ends, the controller can transfer the photo charge from the first photodiode and the second photodiode to, respectively, the first floating diffusion and the second floating diffusion to generate a first signal voltage and a second signal voltage, and quantize the signal voltages into digital signal values using the quantizer. Digital representations can be generated based on the digital reset values and the digital signal values.

    Digital image sensor using a single-input comparator based quantizer
    4.
    发明授权
    Digital image sensor using a single-input comparator based quantizer 有权

    公开(公告)号：US12022218B2

    公开(公告)日：2024-06-25

    申请号：US17554896

    申请日：2021-12-17

    Applicant: META PLATFORMS TECHNOLOGIES, LLC

    Inventor： Song Chen ,  Xinqiao Liu ,  Tsung-Hsun Tsai

    IPC: H04N25/75 ,  G06F3/14 ,  H04N25/771

    CPC classification number: H04N25/75 ,  G06F3/14 ,  H04N25/771

    Abstract: One example described herein includes the digital image sensor having a pixel cell with a photodiode and a quantizer circuit coupled to the pixel cell. The quantizer circuit includes a charge storage device that generates a voltage based on electric charge from the photodiode. The quantizer circuit also includes a single-input comparator that can switch from a first output state to a second output state in response to a ramp signal provided by a ramp generator. The quantizer circuit further includes a memory switch that can cause a counter value from a digital counter to be stored in a digital memory in response to the single-input comparator switching from the first output state to the second output state. The counter value can serve as a digital pixel value associated with the pixel cell.

    Pixel sensor having multiple photodiodes and shared comparator
    6.
    发明授权
    Pixel sensor having multiple photodiodes and shared comparator 有权

    公开(公告)号：US11956413B2

    公开(公告)日：2024-04-09

    申请号：US16550851

    申请日：2019-08-26

    Applicant: META PLATFORMS TECHNOLOGIES, LLC

    Inventor： Song Chen ,  Xinqiao Liu ,  Lyle David Bainbridge ,  Andrew Samuel Berkovich

    IPC: H04N5/355 ,  H04N5/378 ,  H04N13/286

    CPC classification number: H04N13/286 ,  H04N5/3559 ,  H04N5/378

    Abstract: In one example, an apparatus comprises: a first photodiode to generate a first charge; a second photodiode to generate a second charge; a quantizer; a first memory bank and a second memory bank; and a controller configured to: control the quantizer to perform a first quantization operation and a second quantization operation of the first charge to generate, respectively, a first digital output and a second digital output, the first and second quantization operations being associated with different intensity ranges; store one of the first digital output or the second digital output in the first memory bank; control the quantizer to perform a third quantization operation of the second charge to generate a third digital output, the third quantization operation being associated with a different intensity range from at least one of the first or second quantization operations; and store the third digital output in the second memory bank.

    Image sensor post processing
    8.
    发明授权
    Image sensor post processing 有权

    公开(公告)号：US11595602B2

    公开(公告)日：2023-02-28

    申请号：US16672427

    申请日：2019-11-01

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Wei Gao ,  Andrew Samuel Berkovich ,  Song Chen ,  Tsung-Hsun Tsai ,  Xinqiao Liu

    IPC: H04N5/378 ,  H04N5/359

    Abstract: Methods and systems for quantizing a physical quantity, such as light, are provided. In one example, an apparatus comprises an analog-to-digital (A/D) converter configured to generate raw digital outputs based on performing at least one of: (1) a first quantization operation to quantize a physical stimulus within a first intensity range based on a first A/D conversion relationship, or (2) a second quantization operation to quantize the physical stimulus within a second intensity range based on a second A/D conversion relationship; and a raw output conversion circuit configured generate a refined digital output based on a raw digital output obtained from the A/D converter and at least one predetermined conversion parameter. The at least one conversion parameter compensates for a discontinuity between the first A/D conversion relationship and the second A/D conversion relationship.

    Digital pixel with extended dynamic range
    9.
    发明授权
    Digital pixel with extended dynamic range 有权

    公开(公告)号：US11906353B2

    公开(公告)日：2024-02-20

    申请号：US16435451

    申请日：2019-06-07

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Xinqiao Liu ,  Song Chen ,  Andrew Samuel Berkovich ,  Wei Gao

    IPC: G01J1/44

    CPC classification number: G01J1/44 ,  G01J2001/446

    Abstract: In one example, an apparatus comprises a photodiode, a charge storage unit, and a processing circuits configured to: transfer overflow charge from the photodiode to the charge storage unit to develop a first voltage; compare the first voltage against a first ramping threshold voltage to generate a first decision; generate, based on the first decision, a first digital value; transfer residual charge from the photodiode to the charge storage unit to develop a second voltage; compare the second voltage against a static threshold voltage to determine whether the photodiode saturates to generate a second decision; compare the second voltage against a second ramping threshold voltage to generate a third decision; generate, based on the third decision, a second digital value; and output, based on the second decision, one of the first digital value or the second digital value to represent an intensity of light received by the photodiode.

    Pixel sensor having shared readout structure
    10.
    发明授权
    Pixel sensor having shared readout structure 有权

    公开(公告)号：US11877080B2

    公开(公告)日：2024-01-16

    申请号：US17538092

    申请日：2021-11-30

    Applicant: Meta Platforms Technologies, LLC

    Inventor： Xinqiao Liu ,  Song Chen ,  Tsung-Hsun Tsai

    IPC: H04N25/75 ,  H01L27/146 ,  H04N23/73 ,  H04N25/77 ,  G02B27/01

    CPC classification number: H04N25/75 ,  H01L27/14643 ,  H04N23/73 ,  H04N25/77 ,  G02B27/0172 ,  G02B2027/0178

    Abstract: An apparatus comprises a first photodiode, a second photodiode, a quantizer, a memory, and a controller configured to: set a first exposure period in which the first photodiode generates a first charge; set a second exposure period in which the second photodiode generates a second charge, the second exposure period being set based on the first exposure period and at least one of: a first time associated with a read out operation of the memory to a second apparatus, or a second time associated with a quantization operation by the quantizer; perform, using the quantizer, the first quantization operation of the first charge to generate a first digital output; and perform, using the quantizer, a second quantization operation of the second charge to generate a second digital output.

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