公开(公告)号：US09620640B2

公开(公告)日：2017-04-11

申请号：US14450445

申请日：2014-08-04

Applicant: MediaTek Inc.

Inventor： Cheng-Chou Hung ,  Tung-Hsing Lee ,  Bernard Mark Tenbroek ,  Rong-Tang Chen

IPC: H01L21/02 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10 ,  H01L29/49 ,  H01L29/786

CPC classification number: H01L29/783 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/4238 ,  H01L29/4975 ,  H01L29/78615 ,  H01L29/78654 ,  H01L29/78657

Abstract: The invention provides a body-contact metal-oxide-semiconductor field effect transistor (MOSFET) device. The body-contact MOSFET device includes a substrate. An active region is disposed on the substrate. A gate strip is extended along a first direction disposed on a first portion of the active region. A source doped region and a drain doped region are disposed on a second portion and a third portion of the active region, adjacent to opposite sides of the gate strip. The opposite sides of the gate strip are extended along the first direction. A body-contact doped region is disposed on a fourth portion of the active region. The body-contact doped region is separated from the gate strip by a fifth portion of the active region. The fifth portion is not covered by any silicide features.