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    DILUTE NITRIDE LONG-WAVELENGTH EMITTER WITH IMPROVED PERFORMANCE OVER TEMPERATURE
    1.
    发明公开
    DILUTE NITRIDE LONG-WAVELENGTH EMITTER WITH IMPROVED PERFORMANCE OVER TEMPERATURE 审中-公开

    公开(公告)号：US20230261443A1

    公开(公告)日：2023-08-17

    申请号：US17808030

    申请日：2022-06-21

    Applicant: Lumentum Operations LLC

    Inventor： Matthew Glenn PETERS ,  Jun YANG ,  Ajit Vijay BARVE ,  Guowei ZHAO

    IPC: H01S5/34

    CPC classification number: H01S5/3409 ,  H01S5/3407

    Abstract: In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

    METHODS FOR FORMING A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE
    2.
    发明申请
    METHODS FOR FORMING A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE 有权

    公开(公告)号：US20220209506A1

    公开(公告)日：2022-06-30

    申请号：US17364287

    申请日：2021-06-30

    Applicant: Lumentum Operations LLC

    Inventor： Benjamin KESLER ,  Ajit Vijay BARVE ,  Jun YANG ,  Guowei ZHAO ,  Matthew Glenn PETERS

    IPC: H01S5/343 ,  H01S5/34 ,  H01S5/183

    Abstract: A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH CURRENT-BLOCKING REFLECTOR
    3.
    发明申请
    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH CURRENT-BLOCKING REFLECTOR 有权

    公开(公告)号：US20250125586A1

    公开(公告)日：2025-04-17

    申请号：US18536467

    申请日：2023-12-12

    Applicant: Lumentum Operations LLC

    Inventor： Jun YANG ,  Guowei ZHAO ,  Eric R. HEGBLOM ,  Yeyu ZHU ,  Yuefa LI ,  Matthew Glenn PETERS

    IPC: H01S5/183 ,  H01S5/30 ,  H01S5/42

    Abstract: An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

    VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH ISOLATED CATHODES AND A COMMON ANODE
    5.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAY WITH ISOLATED CATHODES AND A COMMON ANODE 有权

    公开(公告)号：US20210399525A1

    公开(公告)日：2021-12-23

    申请号：US17135511

    申请日：2020-12-28

    Applicant: Lumentum Operations LLC

    Inventor： Guowei ZHAO ,  Matthew Glenn PETERS ,  Jun YANG ,  Eric R. HEGBLOM

    IPC: H01S5/183 ,  H01S5/34 ,  H01S5/042 ,  H01S5/42

    Abstract: A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

    VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A TUNNEL JUNCTION
    6.
    发明申请
    VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A TUNNEL JUNCTION 有权

    公开(公告)号：US20210367407A1

    公开(公告)日：2021-11-25

    申请号：US16948763

    申请日：2020-09-30

    Applicant: Lumentum Operations LLC

    Inventor： Jun YANG ,  Guowei ZHAO ,  Matthew Glenn PETERS ,  Eric R. HEGBLOM ,  Ajit Vijay BARVE ,  Benjamin KESLER

    IPC: H01S5/34 ,  H01S5/183 ,  H01S5/042

    Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH DUAL WAVELENGTH BANDS
    7.
    发明申请
    VERTICAL CAVITY SURFACE EMITTING LASER DEVICE WITH DUAL WAVELENGTH BANDS 有权

    公开(公告)号：US20250007247A1

    公开(公告)日：2025-01-02

    申请号：US18478677

    申请日：2023-09-29

    Applicant: Lumentum Operations LLC

    Inventor： Yeyu ZHU ,  Jun YANG

    IPC: H01S5/183 ,  H01S5/042 ,  H01S5/22 ,  H01S5/30

    Abstract: A dual-emission-wavelength vertical-cavity surface-emitting laser (VCSEL) device includes a substrate layer; a first distributed Bragg reflector (DBR) arranged on the substrate layer and being based on a first wavelength, a second DBR arranged on the first DBR and being based on a second wavelength that is different from the first wavelength, a third DBR arranged on the second DBR and being based on a third wavelength that is different from the first and the second wavelengths; a first active layer configured to generate a first laser light at a first emission wavelength and being arranged between the first DBR and the second DBR; and a second active layer configured to generate a second laser light at a second emission wavelength that is different from the first emission wavelength and being arranged between the second DBR and the third DBR.

    MULTIPHASE GROWTH SEQUENCE FOR FORMING A VERTICAL CAVITY SURFACE EMITTING LASER
    8.
    发明申请
    MULTIPHASE GROWTH SEQUENCE FOR FORMING A VERTICAL CAVITY SURFACE EMITTING LASER 有权

    公开(公告)号：US20220209501A1

    公开(公告)日：2022-06-30

    申请号：US17364443

    申请日：2021-06-30

    Applicant: Lumentum Operations LLC

    Inventor： Guowei ZHAO ,  Jun YANG ,  Ajit Vijay BARVE ,  Matthew Glenn PETERS

    IPC: H01S5/183 ,  H01S5/343 ,  H01S5/34

    Abstract: A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence includes forming a first mirror over a substrate; forming an active region (e.g., a dilute nitride active region) over the first mirror; forming an oxidation aperture (OA) layer over the active region; forming a spacer on a surface of the OA layer; and forming a second mirror over the spacer. The active region is formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence and the second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence.

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