公开(公告)号：US20230261443A1

公开(公告)日：2023-08-17

申请号：US17808030

申请日：2022-06-21

Applicant: Lumentum Operations LLC

Inventor： Matthew Glenn PETERS ,  Jun YANG ,  Ajit Vijay BARVE ,  Guowei ZHAO

IPC: H01S5/34

CPC classification number: H01S5/3409 ,  H01S5/3407

Abstract: In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.

公开(公告)号：US20220209506A1

公开(公告)日：2022-06-30

申请号：US17364287

申请日：2021-06-30

Applicant: Lumentum Operations LLC

Inventor： Benjamin KESLER ,  Ajit Vijay BARVE ,  Jun YANG ,  Guowei ZHAO ,  Matthew Glenn PETERS

IPC: H01S5/343 ,  H01S5/34 ,  H01S5/183

Abstract: A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

公开(公告)号：US20230238775A1

公开(公告)日：2023-07-27

申请号：US17654716

申请日：2022-03-14

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Matthew Glenn PETERS ,  Guowei ZHAO ,  Benjamin KESLER ,  Eric R. HEGBLOM

IPC: H01S5/183 ,  H01S5/34

CPC classification number: H01S5/18397 ,  H01S5/18361 ,  H01S5/3416 ,  H01S5/18311 ,  H01S5/18305

Abstract: A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.

公开(公告)号：US20220385041A1

公开(公告)日：2022-12-01

申请号：US17305778

申请日：2021-07-14

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Eric R. HEGBLOM ,  Guowei ZHAO ,  Matthew Glenn PETERS

IPC: H01S5/183 ,  H01S5/34

Abstract: In some implementations, an emitter may include a substrate and a set of layers on the substrate. The set of layers may include a first mirror, a second mirror that includes a partial reflector and an additional layer, and at least one active region between the first mirror and the second mirror. A first reflectivity of the second mirror at a lateral center of the second mirror may be different than a second reflectivity of the second mirror at a lateral edge of the second mirror.

公开(公告)号：US20240146027A1

公开(公告)日：2024-05-02

申请号：US18390648

申请日：2023-12-20

Applicant: Lumentum Operations LLC

Inventor： Guowei ZHAO ,  Matthew Glenn PETERS ,  Jun YANG ,  Eric R. HEGBLOM

IPC: H01S5/183 ,  H01S5/042 ,  H01S5/34 ,  H01S5/42

CPC classification number: H01S5/18361 ,  H01S5/04256 ,  H01S5/18311 ,  H01S5/3416 ,  H01S5/423

Abstract: A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

公开(公告)号：US20220416512A1

公开(公告)日：2022-12-29

申请号：US17451167

申请日：2021-10-18

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Ajit Vijay BARVE ,  Guowei ZHAO ,  Matthew Glenn PETERS ,  Eric R. HEGBLOM

IPC: H01S5/34 ,  H01S5/343 ,  H01S5/183

Abstract: A vertical-cavity surface-emitting laser (VCSEL) may include a substrate. The VCSEL may include a bottom mirror structure over the substrate. The VCSEL may include a first dilute nitride active region over the bottom mirror structure. The VCSEL may include a tunnel junction over the first dilute nitride active region. The VCSEL may include a second dilute nitride active region over the tunnel junction. The VCSEL may include a top mirror structure over the second dilute nitride active region.

公开(公告)号：US20190067906A1

公开(公告)日：2019-02-28

申请号：US15688218

申请日：2017-08-28

Applicant: Lumentum Operations LLC

Inventor： Albert YUEN ,  Ajit Vijay BARVE ,  Guowei ZHAO ,  Eric R. HEGBLOM

IPC: H01S5/062 ,  H01S5/183 ,  G02B6/42 ,  G02B27/22 ,  H01L33/10 ,  H01S5/42

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include an active layer, a first mirror, a second mirror, and one or more oxidation layers. The active layer may be between the first mirror and the second mirror, and the one or more oxidation layers may be proximate to the active layer. The one or more oxidation layers may be configured to control beam divergence of a laser beam emitted by the VCSEL based on at least one of: a quantity of the one or more oxidation layers, a shape of the one or more oxidation layers, a thickness of the one or more oxidation layers, or a proximity of the one or more oxidation layers to the active layer.

公开(公告)号：US20220209501A1

公开(公告)日：2022-06-30

申请号：US17364443

申请日：2021-06-30

Applicant: Lumentum Operations LLC

Inventor： Guowei ZHAO ,  Jun YANG ,  Ajit Vijay BARVE ,  Matthew Glenn PETERS

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/34

Abstract: A method of forming a vertical cavity surface emitting laser (VCSEL) device using a multiphase growth sequence includes forming a first mirror over a substrate; forming an active region (e.g., a dilute nitride active region) over the first mirror; forming an oxidation aperture (OA) layer over the active region; forming a spacer on a surface of the OA layer; and forming a second mirror over the spacer. The active region is formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence and the second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence.

公开(公告)号：US20220140573A1

公开(公告)日：2022-05-05

申请号：US17648012

申请日：2022-01-14

Applicant: Lumentum Operations LLC

Inventor： Benjamin KESLER ,  Ajit Vijay BARVE ,  Guowei ZHAO

IPC: H01S5/42 ,  H01L21/02

Abstract: A wafer may comprise a substrate layer and a plurality of vertical cavity surface emitting lasers (VCSELs) formed on or within the substrate layer. A respective trench-to-trench distance associated with the plurality of VCSELs may vary across the wafer based on a predicted variation of an oxidation rate of an oxidation layer across the wafer.

公开(公告)号：US20250125586A1

公开(公告)日：2025-04-17

申请号：US18536467

申请日：2023-12-12

Applicant: Lumentum Operations LLC

Inventor： Jun YANG ,  Guowei ZHAO ,  Eric R. HEGBLOM ,  Yeyu ZHU ,  Yuefa LI ,  Matthew Glenn PETERS

IPC: H01S5/183 ,  H01S5/30 ,  H01S5/42

Abstract: An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.