METHODS FOR FORMING A VERTICAL CAVITY SURFACE EMITTING LASER DEVICE

    公开(公告)号:US20220209506A1

    公开(公告)日:2022-06-30

    申请号:US17364287

    申请日:2021-06-30

    Abstract: A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

    VERTICALLY OFFSET VERTICAL CAVITY SURFACE EMITTING LASERS

    公开(公告)号:US20230102622A1

    公开(公告)日:2023-03-30

    申请号:US17453060

    申请日:2021-11-01

    Abstract: A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

    VERTICAL-CAVITY SURFACE-EMITTING LASER WITH A TUNNEL JUNCTION

    公开(公告)号:US20210367407A1

    公开(公告)日:2021-11-25

    申请号:US16948763

    申请日:2020-09-30

    Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

    OPTIMIZING A LAYOUT OF AN EMITTER ARRAY

    公开(公告)号:US20230094127A1

    公开(公告)日:2023-03-30

    申请号:US18061593

    申请日:2022-12-05

    Abstract: A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

    INTEGRATED FLOOD AND SPOT ILLUMINATORS

    公开(公告)号:US20220085572A1

    公开(公告)日:2022-03-17

    申请号:US17247660

    申请日:2020-12-18

    Abstract: In some implementations, an emitter module may include an emitter layer including a first emitter array configured to produce a first beam that provides flood illumination, and a second emitter array configured to produce a second beam that provides spot illumination. The emitter module may include a first optics layer, positioned in front of the emitter layer, that includes a first collimating lens positioned in front of the first emitter array, and a second collimating lens positioned in front of the second emitter array. The emitter module may include a second optics layer, positioned in front of the first optics layer, that includes an optical diffuser positioned in front of the first collimating lens, and a beamsplitter grating positioned in front of the second collimating lens.

    MANIPULATING BEAM DIVERGENCE OF MULTI-JUNCTION VERTICAL CAVITY SURFACE EMITTING LASER

    公开(公告)号:US20230238775A1

    公开(公告)日:2023-07-27

    申请号:US17654716

    申请日:2022-03-14

    Abstract: A multi junction vertical cavity surface emitting laser (VCSEL) may comprise a substrate, a top contact, and a stack comprising a set of layers formed between the substrate and the top contact. In some implementations, the set of layers formed between the substrate and the top contact may comprise a cavity comprising a first active region, a second active region, and a tunnel junction connecting the first active region and the second active region, a first distributed Bragg reflector (DBR) pair comprising a high-contrast p-type DBR (p-DBR) and a low-contrast p-DBR between the cavity and the top contact, and a second DBR pair comprising a high-contrast n-type DBR (n-DBR) and a low-contrast n-DBR between the cavity and the substrate. The low-contrast p-DBR and the low-contrast n-DBR are located on an inner side of the stack, and the high-contrast p-DBR and the high-contrast n-DBR are located on an outer side of the stack.

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