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公开(公告)号：US20230261443A1
公开(公告)日：2023-08-17
申请号：US17808030
申请日：2022-06-21
Applicant: Lumentum Operations LLC
Inventor： Matthew Glenn PETERS , Jun YANG , Ajit Vijay BARVE , Guowei ZHAO
IPC: H01S5/34
CPC classification number: H01S5/3409 , H01S5/3407
Abstract: In some implementations, a method may include forming a quantum well (QW) layer using an epitaxial growth process, where the epitaxial growth process is performed according to a first growth mode to form the QW layer. The method may include forming a quantum well barrier (QWB) layer using the epitaxial growth process, where the epitaxial growth process is performed according to a second growth mode to form the QWB layer. In some implementations, a nitrogen flux used in the first growth mode is different from a nitrogen flux used in the second growth mode. In some implementations, a gallium flux used in the first growth mode is different from a gallium flux used in the second growth mode.
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公开(公告)号：US20220209506A1
公开(公告)日：2022-06-30
申请号：US17364287
申请日：2021-06-30
Applicant: Lumentum Operations LLC
Inventor： Benjamin KESLER , Ajit Vijay BARVE , Jun YANG , Guowei ZHAO , Matthew Glenn PETERS
Abstract: A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.
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公开(公告)号：US20210344174A1
公开(公告)日：2021-11-04
申请号：US16947351
申请日：2020-07-29
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay BARVE , Matthew Glenn PETERS , Eric R. HEGBLOM
Abstract: A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.
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公开(公告)号：US20190326732A1
公开(公告)日：2019-10-24
申请号：US16456480
申请日：2019-06-28
Applicant: Lumentum Operations LLC
Inventor： Albert YUEN , Ajit Vijay BARVE
Abstract: In some implementations, a VCSEL array may include a plurality of VCSELs that each operates concurrently and emits light at a same wavelength. A first distance between a first pair of adjacent VCSELs, of the plurality of VCSELs, may be different from a second distance between a second pair of adjacent VCSELs of the plurality of VCSELs. The first pair of adjacent VCSELs may be located closer to a center of the VCSEL array than the second pair of adjacent VCSELs. At least one of temperature non-uniformity or optical power non-uniformity among the plurality of VCSELs may be reduced as compared to another VCSEL array, with a same physical footprint as the VCSEL array, comprising uniformly spaced VCSELs.
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公开(公告)号：US20210367407A1
公开(公告)日：2021-11-25
申请号：US16948763
申请日：2020-09-30
Applicant: Lumentum Operations LLC
Inventor： Jun YANG , Guowei ZHAO , Matthew Glenn PETERS , Eric R. HEGBLOM , Ajit Vijay BARVE , Benjamin KESLER
Abstract: A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.
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Patent Agency Ranking
公开(公告)号：US20190305522A1
公开(公告)日：2019-10-03
申请号：US16363753
申请日：2019-03-25
Applicant: Lumentum Operations LLC
Inventor： Albert YUEN , Ajit Vijay BARVE
Abstract: An emitter array may comprise a plurality of emitters that includes two adjacent emitters. The emitter array may comprise a plurality of emitters that includes two adjacent emitters. The ohmic metal layer may include a portion that is shared by, and located between, the two adjacent emitters. The emitter array may comprise a protective layer over the ohmic metal layer. The emitter array may comprise a via through the protective layer to the portion. The via is shared by, and located between, the two adjacent emitters.
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公开(公告)号：US20190199063A1
公开(公告)日：2019-06-27
申请号：US16217790
申请日：2018-12-12
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay BARVE , Benjamin Kesler , Matthew Glenn Petters
IPC: H01S5/183
CPC classification number: H01S5/18305 , H01S5/18311 , H01S5/18344 , H01S5/18369
Abstract: An emitter array may comprise a plurality of emitters and a metallization layer to electrically connect the plurality of emitters. The metallization layer may have a first end and a second end. The plurality of emitters may include a first emitter and a second emitter. The first emitter may be located closer to the first end than the second emitter. The first emitter and the second emitter have differently sized structures to compensate for a first impedance of the metallization layer between the first end and the first emitter and a second impedance between the first end and the second emitter.
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公开(公告)号：US20170310086A1
公开(公告)日：2017-10-26
申请号：US15638813
申请日：2017-06-30
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay BARVE , Albert YUEN
Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
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公开(公告)号：US20240170927A1
公开(公告)日：2024-05-23
申请号：US18423416
申请日：2024-01-26
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay BARVE , Eric R. HEGBLOM
CPC classification number: H01S5/423 , H01S5/04257 , H01S5/18305 , H01S5/18361 , H01S5/18386 , H01S5/18394
Abstract: In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.
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公开(公告)号：US20230006422A1
公开(公告)日：2023-01-05
申请号：US17929377
申请日：2022-09-02
Applicant: Lumentum Operations LLC
Inventor： Ajit Vijay BARVE , Albert YUEN
Abstract: A surface emitting laser may include an isolation layer including a first center portion and a first plurality of outer portions extending from the first center portion, and a metal layer including a second center portion and a second plurality of outer portions extending from the second center portion. The metal layer may be formed on the isolation layer such that a first outer portion, of the second plurality of outer portions, is formed over one of the first plurality of outer portions. The surface emitting laser may include a passivation layer including a plurality of openings. An opening may be formed over the first outer portion. The surface emitting laser may include a plurality of oxidation trenches. An oxidation trench may be positioned at least partially between the first outer portion and a second outer portion of the second plurality of outer portions.
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