公开(公告)号：US20230125229A1

公开(公告)日：2023-04-27

申请号：US17456839

申请日：2021-11-29

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Ki Hun SEONG

IPC: G03F1/62 ,  G03F7/20 ,  G03F7/11

Abstract: A pellicle for extreme ultraviolet (EUV) lithography is based on yttrium carbide and used in a EUV lithography process. The pellicle for EUV lithography includes a pellicle layer that has a core layer containing yttrium carbide. The yttrium carbide is YCX (0.25

公开(公告)号：US20220326602A1

公开(公告)日：2022-10-13

申请号：US17698404

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Hye Young KIM

IPC: G03F1/64 ,  G03F7/20 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

公开(公告)号：US20220326600A1

公开(公告)日：2022-10-13

申请号：US17698370

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Hye Young KIM

IPC: G03F1/64 ,  G03F7/20

Abstract: This application relates to a pellicle for extreme ultraviolet lithography containing amorphous carbon and a manufacturing method thereof. In one aspect, the pellicle includes a substrate having an opening formed in a central portion, a support layer formed on the substrate to cover the opening, and a pellicle layer formed on the support layer and containing amorphous carbon. The pellicle layer may include a core layer formed on the support layer, and a capping layer formed on the core layer and may further include a buffer layer. At least one of the core layer, the capping layer, or the buffer layer may be an amorphous carbon layer.

公开(公告)号：US20220146928A1

公开(公告)日：2022-05-12

申请号：US17454377

申请日：2021-11-10

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Hye Young KIM

IPC: G03F1/64 ,  C01B32/182 ,  G03F7/20

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.

公开(公告)号：US20220326603A1

公开(公告)日：2022-10-13

申请号：US17698427

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Yong Kyung KIM

IPC: G03F1/64

Abstract: A pellicle for extreme ultraviolet lithography containing molybdenum carbide is disclosed. The pellicle includes a substrate having an opening formed in a central portion, and a pellicle layer formed on the substrate to cover the opening and including a molybdenum carbide containing layer that contains molybdenum carbide expressed as MoC1-x (0

公开(公告)号：US20220171278A1

公开(公告)日：2022-06-02

申请号：US17539942

申请日：2021-12-01

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Seul Gi KIM ,  Jun Hyeok JEON

IPC: G03F1/62

Abstract: This application relates to a method for manufacturing a pellicle for extreme ultraviolet lithography. In one aspect, the method includes forming a support layer of a silicon nitride material on a silicon substrate, and forming a core layer of a graphene material on the support layer. The method may also include forming a graphene defect healing layer on the core layer by selectively forming a material of MeOxNy (Me is one of Si, Al, Ti, Zr, and Hf, x+y=2) at a grain boundary of the core layer in an atomic layer deposition process using heat in order to heal defects generated in graphene forming the core layer without additional damage to the graphene. The method may further include a capping layer on the graphene defect healing layer, wherein a central portion of the silicon substrate under the support layer is removed to form an opening partially exposing the support layer.

公开(公告)号：US20220334464A1

公开(公告)日：2022-10-20

申请号：US17698455

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Ki Hun SEONG

IPC: G03F1/64 ,  G03F7/20

Abstract: This application relates to a pellicle for extreme ultraviolet lithography used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer formed of an M-α material in which M is combined with α. Here, M is one of Si, Zr, Mo, Ru, Y, W, Ti, Ir, or Nb, and a is at least two of B, N, C, O, or F.

公开(公告)号：US20220326601A1

公开(公告)日：2022-10-13

申请号：US17698383

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Ki Hun SEONG

IPC: G03F1/64 ,  G03F1/22 ,  G03F7/20 ,  G02B5/20 ,  G02B5/28

Abstract: This application relates to a pellicle for extreme ultraviolet lithography based on yttrium (Y) and used in a lithography process using extreme ultraviolet rays. In one aspect, the pellicle includes a pellicle layer including a core layer formed of an yttrium-based material expressed as Y-M (M is one of B, Si, O, or F).

公开(公告)号：US20220146949A1

公开(公告)日：2022-05-12

申请号：US17454104

申请日：2021-11-09

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Hyun Mi KIM ,  Jin Woo CHO ,  Seul Gi KIM ,  Ki Hun SEONG

IPC: G03F7/20

Abstract: A pellicle for extreme ultraviolet lithography has an extreme ultraviolet transmittance of 90% or more and also has thermal stability, mechanical stability, and chemical durability. The pellicle includes a support layer and a pellicle layer. The support layer has an opening formed in a central portion thereof. The pellicle layer is formed on the support layer to cover the opening and includes ZrBx (2

公开(公告)号：US20240280893A1

公开(公告)日：2024-08-22

申请号：US18411594

申请日：2024-01-12

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun KIM ,  Seul Gi KIM

IPC: G03F1/64

CPC classification number: G03F1/64

Abstract: Proposed is a pellicle for extreme ultraviolet (EUV) lithography based on a nanotube and having good optical properties, thermal stability, mechanical stability and chemical durability. The pellicle may include a frame having an opening formed in a central portion, and a pellicle membrane supported by the frame and covering the opening. The pellicle membrane may be formed in a reticular structure based on nanotubes, and include a coating layer formed by coating at least part of the nanotubes with a metal or metal compound. The metal or metal compound may be based on at least one of Mo, Si, Zr, Nb, Ru, Y, La, or Ce, or any alloy thereof.