公开(公告)号：US20240365688A1

公开(公告)日：2024-10-31

申请号：US18326530

申请日：2023-05-31

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Shinhyun CHOI ,  See-On PARK ,  Jongmin BAE ,  Hakcheon JEONG ,  Jongyong PARK

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  H10B63/80 ,  H10N70/826 ,  H10N70/841 ,  H10N70/8833 ,  H10N70/026

Abstract: Disclosed are a memory device and a memory apparatus including the memory device. The memory device includes a first electrode, a second electrode spaced apart from the first electrode, and a resistance change layer arranged between the first electrode and the second electrode and doped with a halogen element in a metal oxide having an oxygen content that gradually changes from the second electrode to the first electrode.

公开(公告)号：US20240147875A1

公开(公告)日：2024-05-02

申请号：US18489172

申请日：2023-10-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Shinhyun CHOI ,  See-On PARK ,  Seok Man HONG

IPC: H10N70/00 ,  H10B63/10 ,  H10N70/20

CPC classification number: H10N70/828 ,  H10B63/10 ,  H10N70/011 ,  H10N70/231

Abstract: Provided is a phase change RAM. The phase change RAM includes an electrode, a first layer located on the electrode, and a second layer located on the first layer. The first layer includes a locally formed phase change material region. In addition, a method of manufacturing a phase change RAM is provided. The method includes forming an electrode, forming a first layer on the electrode, forming a second layer on the first layer, and forming a phase change material region locally in the first layer due to a voltage applied to the second layer.