公开(公告)号：US20240365688A1

公开(公告)日：2024-10-31

申请号：US18326530

申请日：2023-05-31

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Shinhyun CHOI ,  See-On PARK ,  Jongmin BAE ,  Hakcheon JEONG ,  Jongyong PARK

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/231 ,  H10B63/80 ,  H10N70/826 ,  H10N70/841 ,  H10N70/8833 ,  H10N70/026

Abstract: Disclosed are a memory device and a memory apparatus including the memory device. The memory device includes a first electrode, a second electrode spaced apart from the first electrode, and a resistance change layer arranged between the first electrode and the second electrode and doped with a halogen element in a metal oxide having an oxygen content that gradually changes from the second electrode to the first electrode.