公开(公告)号：US20240147875A1

公开(公告)日：2024-05-02

申请号：US18489172

申请日：2023-10-18

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Shinhyun CHOI ,  See-On PARK ,  Seok Man HONG

IPC: H10N70/00 ,  H10B63/10 ,  H10N70/20

CPC classification number: H10N70/828 ,  H10B63/10 ,  H10N70/011 ,  H10N70/231

Abstract: Provided is a phase change RAM. The phase change RAM includes an electrode, a first layer located on the electrode, and a second layer located on the first layer. The first layer includes a locally formed phase change material region. In addition, a method of manufacturing a phase change RAM is provided. The method includes forming an electrode, forming a first layer on the electrode, forming a second layer on the first layer, and forming a phase change material region locally in the first layer due to a voltage applied to the second layer.