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公开(公告)号：US10474040B2
公开(公告)日：2019-11-12
申请号：US16009939
申请日：2018-06-15
Applicant: KLA-Tencor Corporation
Inventor： Frank Laske , Ulrich Pohlmann , Stefan Eyring , Nadav Gutman
Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.
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Patent Agency Ranking
公开(公告)号：US09851643B2
公开(公告)日：2017-12-26
申请号：US13791470
申请日：2013-03-08
Applicant: KLA-Tencor Corporation
Inventor： Francis Charles Chilese , Ulrich Pohlmann , Detlef Wolter , Joseph Fleming Walsh
CPC classification number: G03F7/70691 , B25J11/0095 , G03F1/84 , G03F7/70741
Abstract: Systems and methods to control particle generation in a reticle inspection system are presented. The number of particles added to a reticle during an entire load-inspect-unload sequence of a reticle inspection system is reduced by performing all reticle contact events in a controlled, flowing air environment. In one embodiment, the reticle is fixed to a carrier by clamping outside of the vacuum environment, and the carrier, rather than the reticle, is coupled to the reticle stage of the inspection system. In this manner, the high levels of back-side particulation associated with electrostatic chucking are avoided. In addition, the carrier is configured to be coupled to the reticle stage in any of four different orientations separated by ninety degrees.
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公开(公告)号：US10473460B2
公开(公告)日：2019-11-12
申请号：US15979336
申请日：2018-05-14
Applicant: KLA-Tencor Corporation
Inventor： Nadav Gutman , Eran Amit , Stefan Eyring , Hari Pathangi , Frank Laske , Ulrich Pohlmann , Thomas Heidrich
Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.
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公开(公告)号：US20190179231A1
公开(公告)日：2019-06-13
申请号：US16009939
申请日：2018-06-15
Applicant: KLA-Tencor Corporation
Inventor： Frank Laske , Ulrich Pohlmann , Stefan Eyring , Nadav Gutman
CPC classification number: G03F7/70633 , G01B11/272 , G01B15/00 , G01B2210/56
Abstract: An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.
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5.发明申请公开(公告)号：US20190178639A1
公开(公告)日：2019-06-13
申请号：US15979336
申请日：2018-05-14
Applicant: KLA-Tencor Corporation
Inventor： Nadav Gutman , Eran Amit , Stefan Eyring , Hari Pathangi , Frank Laske , Ulrich Pohlmann , Thomas Heidrich
IPC: G01B15/00
Abstract: An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.
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6.发明申请Apparatus And Methods For Reticle Handling In An EUV Reticle Inspection Tool 有权在EUV光罩检查工具中的光罩处理的装置和方法公开(公告)号：US20130255407A1
公开(公告)日：2013-10-03
申请号：US13791470
申请日：2013-03-08
Applicant: KLA-TENCOR CORPORATION
Inventor： Francis Charles Chilese , Ulrich Pohlmann , Detlef Wolter , Joseph Fleming Walsh
CPC classification number: G03F7/70691 , B25J11/0095 , G03F1/84 , G03F7/70741
Abstract: Systems and methods to control particle generation in a reticle inspection system are presented. The number of particles added to a reticle during an entire load-inspect-unload sequence of a reticle inspection system is reduced by performing all reticle contact events in a controlled, flowing air environment. In one embodiment, the reticle is fixed to a carrier by clamping outside of the vacuum environment, and the carrier, rather than the reticle, is coupled to the reticle stage of the inspection system. In this manner, the high levels of back-side particulation associated with electrostatic chucking are avoided. In addition, the carrier is configured to be coupled to the reticle stage in any of four different orientations separated by ninety degrees.
Abstract translation: 介绍了在掩模版检测系统中控制粒子产生的系统和方法。 通过在受控流动的空气环境中进行所有的掩模版接触事件，减少了在光罩检查系统的整个负载检查 - 卸载顺序期间添加到掩模版的颗粒数。 在一个实施例中，通过夹在真空环境之外将掩模版固定到载体上，并且载体而不是掩模版被耦合到检查系统的掩模版平台。 以这种方式，避免了与静电吸附相关的高水平的背面微粒。 另外，载体被配置成以分开九十度的四个不同取向中的任何一个耦合到标线片台。
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