Auto-Correlation of Wafer Characterization Data and Generation of Composite Wafer Metrics During Semiconductor Device Fabrication

    公开(公告)号:US20190302734A1

    公开(公告)日:2019-10-03

    申请号:US16254951

    申请日:2019-01-23

    Abstract: A system includes a controller with processors configured to execute an auto-correlation module embodied in one or more sets of program instructions stored in memory. The auto-correlation module is configured to cause the processors to receive one or more patterned wafer geometry metrics, receive wafer characterization data from one or more characterization tools, determine a correlation between the one or more patterned wafer geometry metrics and the wafer characterization data, generate a ranking of the one or more patterned wafer geometry metrics based on the determined correlation, construct a composite metric model from a subset of the one or more patterned wafer geometry metrics based on the ranking of the one or more patterned wafer geometry metrics, generate one or more composite wafer metrics from the composite metric model, and generate a statistical process control output based on the one or more composite wafer metrics.

    Auto-correlation of wafer characterization data and generation of composite wafer metrics during semiconductor device fabrication

    公开(公告)号:US11454949B2

    公开(公告)日:2022-09-27

    申请号:US16254951

    申请日:2019-01-23

    Abstract: A system includes a controller with processors configured to execute an auto-correlation module embodied in one or more sets of program instructions stored in memory. The auto-correlation module is configured to cause the processors to receive one or more patterned wafer geometry metrics, receive wafer characterization data from one or more characterization tools, determine a correlation between the one or more patterned wafer geometry metrics and the wafer characterization data, generate a ranking of the one or more patterned wafer geometry metrics based on the determined correlation, construct a composite metric model from a subset of the one or more patterned wafer geometry metrics based on the ranking of the one or more patterned wafer geometry metrics, generate one or more composite wafer metrics from the composite metric model, and generate a statistical process control output based on the one or more composite wafer metrics.

    Guided Metrology Based on Wafer Topography
    3.
    发明申请

    公开(公告)号:US20180315670A1

    公开(公告)日:2018-11-01

    申请号:US15814884

    申请日:2017-11-16

    Abstract: A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.

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