Method and system for measuring heat flux

    公开(公告)号:US09719867B2

    公开(公告)日:2017-08-01

    申请号:US14290255

    申请日:2014-05-29

    CPC classification number: G01K19/00 G01K17/00

    Abstract: A heat flux sensor equipped measurement wafer includes a substrate, a cover thermally coupled to a portion of the substrate, a sensor cavity formed between the substrate and the cover, a thermal barrier disposed within at least a portion of the sensor cavity, a bottom temperature sensor thermally coupled to the substrate and insulated from the cover by a portion of the thermal barrier and a top temperature sensor thermally coupled to the cover and insulated from the substrate by an additional portion of the thermal barrier, wherein a temperature difference between the bottom temperature sensor and the top temperature sensor is related to a heat flux passing through the substrate and cover proximate to the sensor cavity.

    Method and System for Measuring Radiation and Temperature Exposure of Wafers Along a Fabrication Process Line
    5.
    发明申请
    Method and System for Measuring Radiation and Temperature Exposure of Wafers Along a Fabrication Process Line 有权
    用于测量沿着制造工艺线的晶片的辐射和温度暴露的方法和系统

    公开(公告)号:US20160138969A1

    公开(公告)日:2016-05-19

    申请号:US14880899

    申请日:2015-10-12

    Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

    Abstract translation: 用于测量辐射强度和温度的测量晶片装置包括包括一个或多个空腔的晶片组件。 测量晶片装置还包括检测器组件。 检测器组件设置在晶片组件的一个或多个空腔内。 检测器组件包括一个或多个光传感器。 检测器组件还被配置为对入射在晶片组件的表面上的紫外线的强度进行直接或间接的测量。 检测器组件还被配置为基于一个或多个光传感器的一个或多个特性来确定晶片组件的一个或多个部分的温度。

    Process condition sensing device and method for plasma chamber

    公开(公告)号:US10777393B2

    公开(公告)日:2020-09-15

    申请号:US15851184

    申请日:2017-12-21

    Inventor: Earl Jensen Mei Sun

    Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. The collector portion is the top surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

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