公开(公告)号：US20190353582A1

公开(公告)日：2019-11-21

申请号：US16531940

申请日：2019-08-05

Applicant: KLA-Tencor Corporation

Inventor： Pradeep Vukkadala ,  Haiguang Chen ,  Jaydeep K. Sinha ,  Sathish Veeraraghavan

IPC: G01N19/08 ,  C23C14/54 ,  G03F7/20 ,  G01L1/00 ,  G01L5/00 ,  H01L21/66

Abstract: Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.

公开(公告)号：US11761880B2

公开(公告)日：2023-09-19

申请号：US16531940

申请日：2019-08-05

Applicant: KLA-Tencor Corporation

Inventor： Pradeep Vukkadala ,  Haiguang Chen ,  Jaydeep K. Sinha ,  Sathish Veeraraghavan

IPC: G01N19/08 ,  C23C14/54 ,  G01L1/00 ,  G01L5/00 ,  G03F7/20 ,  H01L21/66 ,  G03F7/00

CPC classification number: G01N19/08 ,  C23C14/54 ,  G01L1/00 ,  G01L5/0047 ,  G03F7/705 ,  G03F7/70633 ,  G03F7/70783 ,  H01L22/12 ,  H01L22/20

Abstract: Systems and methods for prediction and measurement of overlay errors are disclosed. Process-induced overlay errors may be predicted or measured utilizing film force based computational mechanics models. More specifically, information with respect to the distribution of film force is provided to a finite element (FE) model to provide more accurate point-by-point predictions in cases where complex stress patterns are present. Enhanced prediction and measurement of wafer geometry induced overlay errors are also disclosed.

公开(公告)号：US10249523B2

公开(公告)日：2019-04-02

申请号：US15135022

申请日：2016-04-21

Applicant: KLA-Tencor Corporation

Inventor： Pradeep Vukkadala ,  Sathish Veeraraghavan ,  Jaydeep K. Sinha

IPC: G01B9/02 ,  G03F7/20 ,  G01B11/16 ,  G01B11/24 ,  G01B11/27 ,  H01L21/66 ,  H01L21/67

Abstract: The present invention may include acquiring a wafer shape value at a plurality of points of a wafer surface at a first and second process level, generating a wafer shape change value at each of the points, generating a set of slope of shape change values at each of the points, calculating a set of process tool correctables utilizing the generated set of slope of shape change values, generating a set of slope shape change residuals (SSCRs) by calculating a slope of shape change residual value at each of the points utilizing the set of process tool correctables, defining a plurality of metric analysis regions distributed across the surface, and then generating one or more residual slope shape change metrics for each metric analysis region based on one or more SSCRs within each metric analysis region.

公开(公告)号：US20160372353A1

公开(公告)日：2016-12-22

申请号：US15135022

申请日：2016-04-21

Applicant: KLA-Tencor Corporation

Inventor： Pradeep Vukkadala ,  Sathish Veeraraghavan ,  Jaydeep K. Sinha

IPC: H01L21/67 ,  G01B11/27 ,  G01B11/24 ,  G01B9/02 ,  G01B11/16

CPC classification number: H01L21/67288 ,  G01B9/02021 ,  G01B9/02027 ,  G01B9/02057 ,  G01B11/161 ,  G01B11/2441 ,  G01B11/272 ,  G03F7/70633 ,  G03F7/70783 ,  H01L21/67271 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention may include acquiring a wafer shape value at a plurality of points of a wafer surface at a first and second process level, generating a wafer shape change value at each of the points, generating a set of slope of shape change values at each of the points, calculating a set of process tool correctables utilizing the generated set of slope of shape change values, generating a set of slope shape change residuals (SSCRs) by calculating a slope of shape change residual value at each of the points utilizing the set of process tool correctables, defining a plurality of metric analysis regions distributed across the surface, and then generating one or more residual slope shape change metrics for each metric analysis region based on one or more SSCRs within each metric analysis region.

Abstract translation: 本发明可以包括在第一和第二处理水平的晶片表面的多个点处获取晶片形状值，在每个点产生晶片形状变化值，在每个点产生一组形状变化值的斜率 使用所生成的形状变化值的斜率来计算一组处理工具可校正性，通过使用该集合计算每个点处的形状变化残差值的斜率，生成一组斜率变化残差（SSCR） 定义过程表面上分布的多个度量分析区域，然后基于每个度量分析区域内的一个或多个SSCR，为每个度量分析区域生成一个或多个残留斜率形状变化度量。