Abstract:
The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.
Abstract:
A method of providing high accuracy inspection or metrology in a bright-field differential interference contrast (BF-DIC) system is described. This method can include creating first and second beams from a first light beam. The first and second beams have round cross-sections, and form first partially overlapping scanning spots radially displaced on a substrate. Third and fourth beams are created from the first light beam or a second light beam. The third and fourth beams have elliptical cross-sections, and form second partially overlapping scanning spots tangentially displaced on the substrate. At least one portion of the substrate can be scanned using the first and second partially overlapping scanning spots as the substrate is rotated. Radial and tangential slopes can be determined using measurements obtained from the scanning using the first and second partially overlapping scanning spots. These slopes can be used to determine wafer shape or any localized topography feature.
Abstract:
The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.
Abstract:
The disclosure is directed to a system and method of managing illumination energy applied to illuminated portions of a scanned wafer to mitigate illumination-induced damage without unnecessarily compromising SNR of an inspection system. The wafer may be rotated at a selected spin frequency for scanning wafer defects utilizing the inspection system. Illumination energy may be varied over at least one scanned region of the wafer as a function of radial distance of an illuminated portion from the center of the wafer and the selected spin frequency of the wafer. Illumination energy may be further applied constantly over one or more scanned regions of the wafer beyond a selected distance from the center of the wafer.
Abstract:
A method of providing high accuracy inspection or metrology in a bright-field differential interference contrast (BF-DIC) system is described. This method can include creating first and second beams from a first light beam. The first and second beams have round cross-sections, and form first partially overlapping scanning spots radially displaced on a substrate. Third and fourth beams are created from the first light beam or a second light beam. The third and fourth beams have elliptical cross-sections, and form second partially overlapping scanning spots tangentially displaced on the substrate. At least one portion of the substrate can be scanned using the first and second partially overlapping scanning spots as the substrate is rotated. Radial and tangential slopes can be determined using measurements obtained from the scanning using the first and second partially overlapping scanning spots. These slopes can be used to determine wafer shape or any localized topography feature.