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公开(公告)号：US10007191B2
公开(公告)日：2018-06-26
申请号：US15232302
申请日：2016-08-09
Applicant: KLA-Tencor Corporation
Inventor： John J. Biafore , Mark D. Smith , John S. Graves , David A. Blankenship , Alessandro Vaglio Pret
CPC classification number: G03F7/705 , G03F7/30 , G03F7/322 , G03F7/325 , G03F7/38 , G03F7/70125 , G03F7/70441 , G03F7/70625
Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.
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公开(公告)号：US20180017873A1
公开(公告)日：2018-01-18
申请号：US15232302
申请日：2016-08-09
Applicant: KLA-Tencor Corporation
Inventor： John J. Biafore , Mark D. Smith , John S. Graves , David A. Blankenship , Alessandro Vaglio Pret
IPC: G03F7/38
CPC classification number: G03F7/705 , G03F7/30 , G03F7/322 , G03F7/325 , G03F7/38 , G03F7/70125 , G03F7/70441 , G03F7/70625
Abstract: In some embodiments, a method may include improving a development process of a photoresist. The method may include simulating a negative-tone development process of a photoresist. The method may include determining a reaction of a developer with a soluble photoresist surface. Determining the reaction of the developer may include applying a reaction rate constant at a power of a reaction order to a blocked polymer concentration to yield a resist dissolution rate of soluble resist comprising the dissolution-limited regime of development. The method may include determining a flux of the developer into exposed and partially soluble resist. Determining the flux of the developer may include applying a vector valued diffusion coefficient of the developer dependent upon the blocked polymer concentration to a gradient of developer concentration to an expansion rate of insoluble resist comprising the expansion-controlled regime of development. The method may include optimizing an illumination source and a mask on a full chip.
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