公开(公告)号：US20130336572A1

公开(公告)日：2013-12-19

申请号：US13908623

申请日：2013-06-03

Applicant: KLA-Tencor Corporation

Inventor： DongSub Choi ,  Bill Pierson ,  David Tien ,  James Manka ,  Dongsuk Park

IPC: G06T7/00 ,  G03F1/00

CPC classification number: G06T7/0004 ,  G03F1/00 ,  G03F7/70641 ,  G06T7/0002 ,  G06T2207/30148 ,  G06T2207/30168

Abstract: A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.

Abstract translation: 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称性，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。

公开(公告)号：US09466100B2

公开(公告)日：2016-10-11

申请号：US13908623

申请日：2013-06-03

Applicant: KLA-Tencor Corporation

Inventor： DongSub Choi ,  Bill Pierson ,  David Tien ,  James Manka ,  Dongsuk Park

IPC: G06K9/00 ,  G03F1/00 ,  G06T7/00

CPC classification number: G06T7/0004 ,  G03F1/00 ,  G03F7/70641 ,  G06T7/0002 ,  G06T2207/30148 ,  G06T2207/30168

Abstract: A method for monitoring mask focus includes measuring profile asymmetries in a target feature including sub-resolution assist features and deriving a focus response based on a known correlation between the profile and focus of a corresponding mask. A computer system in a lithographic process may adjust mask focus based on such derived information to conform to a desired fabrication process.

Abstract translation: 用于监测掩模焦点的方法包括测量目标特征中的轮廓不对称性，包括子分辨率辅助特征，并且基于对应掩模的轮廓和焦点之间的已知相关性导出聚焦响应。 光刻工艺中的计算机系统可以基于这样的导出信息来调整掩模焦点以符合所需的制造工艺。

公开(公告)号：US10466596B2

公开(公告)日：2019-11-05

申请号：US14186744

申请日：2014-02-21

Applicant: KLA-Tencor Corporation

Inventor： Bill Pierson ,  Ramkumar Karur-Shanmugam ,  Chin-Chou Huang ,  Ady Levy ,  John Charles Robinson

IPC: G03F7/20

Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.

公开(公告)号：US20150241790A1

公开(公告)日：2015-08-27

申请号：US14186744

申请日：2014-02-21

Applicant: KLA-Tencor Corporation

Inventor： Bill Pierson ,  Ramkumar Karur-Shanmugam ,  Chin-Chou Huang ,  Ady Levy ,  John Charles Robinson

IPC: G03F7/20

Abstract: The present disclosure is directed to a method of determining at least one correctable for a process tool. In an embodiment, the method includes the steps of: measuring one or more parameter values at one or more measurement locations of each field of a selection of measured fields of a wafer; estimating one or more parameter values for one or more locations of each field of a selection of unmeasured fields of the wafer; and determining at least one correctable for a process tool based upon the one or more parameter values measured at the one or more measurement locations of each field of the selection of measured fields of the wafer and the one or more parameter values estimated for the one or more locations of each field of the selection of unmeasured fields of the wafer.

Abstract translation: 本公开涉及一种确定至少一个可校正过程工具的方法。 在一个实施例中，该方法包括以下步骤：测量晶片的测量场的选择的每个场的一个或多个测量位置处的一个或多个参数值; 估计所述晶片的未测量场的选择的每个场的一个或多个位置的一个或多个参数值; 以及基于在晶片的测量场的选择的每个场的一个或多个测量位置处测量的一个或多个参数值以及针对所述晶片的所测量的一个或多个参数值估计的一个或多个参数值来确定至少一个可校正的处理工具 每个场的更多位置选择晶片的未测量场。