公开(公告)号：US11099137B2

公开(公告)日：2021-08-24

申请号：US17006450

申请日：2020-08-28

Applicant: KLA Corporation

Inventor： Aaron J. Rosenberg ,  Jonathan Iloreta ,  Thaddeus G. Dziura ,  Antonio Gellineau ,  Yin Xu ,  Kaiwen Xu ,  John Hench ,  Abhi Gunde ,  Andrei Veldman ,  Liequan Lee ,  Houssam Chouaib

IPC: G01N21/00 ,  G01N21/95 ,  H01L27/02 ,  H01L27/088 ,  H01L27/108 ,  G06T17/10 ,  G06T15/20 ,  G01N21/956 ,  H01L27/115 ,  G06F30/39

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

公开(公告)号：US20250053096A1

公开(公告)日：2025-02-13

申请号：US18231181

申请日：2023-08-07

Applicant: KLA Corporation

Inventor： Houssam Chouaib ,  Tianrong Zhan ,  Jonathan Iloreta ,  Teng Gu ,  Andrei V. Shchegrov

IPC: G03F7/00

Abstract: Methods and systems for generating measurement models of complex semiconductor structures based on re-useable, parametric models are presented herein. In some embodiments, the re-useable, parametric models enable measurement of high aspect ratio (HAR) structures having complex shape profiles. In these embodiments, a re-useable, parametric model includes multiple geometric sections each characterized by a different shape profile. Each shape profile is parameterized by at least one shape parameter. In a further aspect, at least one of the multiple geometric sections includes a plurality of subsections. In some other embodiments, the re-useable, parametric models enable measurement of nanowire based semiconductor structures. The re-useable, parametric models described herein are useful for generating measurement models for both optical metrology and x-ray metrology, e.g., soft x-ray metrology and hard x-ray metrology. The resulting measurement models yield more accurate measurement results with improved robustness.