公开(公告)号：US11214871B2

公开(公告)日：2022-01-04

申请号：US16387042

申请日：2019-04-17

申请人： II-VI Delaware, Inc.

发明人： David Sabens ,  Charles D. Tanner ,  Elgin E. Eissler

IPC分类号： C23C16/511 ,  C23C16/27 ,  C30B29/04 ,  C23C16/455 ,  C30B25/00 ,  C30B35/00 ,  H01J37/32

摘要： A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.

公开(公告)号：US11618945B2

公开(公告)日：2023-04-04

申请号：US16663423

申请日：2019-10-25

申请人： II-VI Delaware, Inc.

发明人： Wen-Qing Xu ,  Thomas E. Anderson ,  Giovanni Barbarossa ,  Elgin E. Eissler ,  Chao Liu ,  Charles D. Tanner

IPC分类号： C23C16/27 ,  C23C16/01 ,  C23C16/56 ,  C23C16/511

摘要： In a method of forming a diamond film, substrate, or window, a substrate is provided and the diamond film, substrate, or window is CVD grown on a surface of the substrate. The grown diamond film, substrate, or window has a thickness between 150-999 microns and an aspect ratio≥100, wherein the aspect ratio is a ratio of a largest dimension of the diamond film, substrate or window divided by a thickness of the diamond film. The substrate can optionally be removed or separated from the grown diamond film, substrate, or window.

公开(公告)号：US10910127B2

公开(公告)日：2021-02-02

申请号：US16502590

申请日：2019-07-03

申请人： II-VI Delaware, Inc.

发明人： Wen-Qing Xu ,  Chao Liu ,  Charles J. Kraisinger ,  Charles D. Tanner ,  Ian Currier ,  David Sabens ,  Elgin E. Eissler ,  Thomas E Anderson

IPC分类号： H01B1/04 ,  C01B32/25 ,  C23C16/27 ,  C23C16/52 ,  C01B32/26

摘要： In a method of chemical vapor deposition (CVD) growth of a polycrystalline diamond film in a CVD reactor, a gas mixture of gaseous hydrogen and a gaseous hydrocarbon is introduced into the CVD reactor. A plasma formed from the gas mixture is maintained above a surface of a conductive substrate disposed in the CVD reactor and causes a polycrystalline diamond film to grow on the surface of the conductive substrate. A temperature T at the center of the polycrystalline diamond film is controlled during growth of the polycrystalline diamond film. The CVD grown polycrystalline diamond film includes diamond crystallites that can have a percentage of orientation along a [110] diamond lattice direction≥70% of the total number of diamond crystallites forming the polycrystalline diamond film.