- 专利标题: Chemical vapor deposition reactor to grow diamond film by microwave plasma chemical vapor deposition
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申请号: US16387042申请日: 2019-04-17
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公开(公告)号: US11214871B2公开(公告)日: 2022-01-04
- 发明人: David Sabens , Charles D. Tanner , Elgin E. Eissler
- 申请人: II-VI Delaware, Inc.
- 申请人地址: US DE Wilmington
- 专利权人: II-VI Delaware, Inc.
- 当前专利权人: II-VI Delaware, Inc.
- 当前专利权人地址: US DE Wilmington
- 代理机构: Blank Rome LLP
- 主分类号: C23C16/511
- IPC分类号: C23C16/511 ; C23C16/27 ; C30B29/04 ; C23C16/455 ; C30B25/00 ; C30B35/00 ; H01J37/32
摘要:
A chemical vapor deposition (CVD) reactor includes a resonating cavity configured to receive microwaves. A microwave transparent window positioned in the resonating cavity separates the resonating cavity into an upper zone and a plasma zone. Microwaves entering the upper zone propagate through the microwave transparent window into the plasma zone. A substrate is disposed proximate a bottom of the plasma zone opposite the microwave transparent window. A ring structure, positioned around a perimeter of the substrate in the plasma zone, includes a lower section that extends from the bottom of the resonating cavity toward the microwave transparent window and an upper section on a side of the lower section opposite the bottom of the resonating cavity. The upper section extends radially toward a central axis of the ring structure. An as-grown diamond film on the substrate is also disclosed.
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