摘要:
In color reading including an infrared light source, light reflected by a document focuses on a light-receiving part of a sensor IC with different conjugate lengths, due to color aberration of the rod-lens. Since the wavelength of the infrared light is relatively long, the deterioration of the reading resolution appears to be extensive. Here, when reading a document such as a valuable security or a paper bill, a defocusing phenomenon has been prevented, and when reading by infrared light, a high accurate reading characteristic has been realized. As a solution, light is irradiated from a light output window (101a) of a light source (101) and reflected by a document (8), and an infrared light shielding area is provided on a bottom face of a glass (51) placed in an optical path of the light reflected by the document (8), between the document (8) and a sensor IC (3).
摘要:
In color reading including an infrared light source, light reflected by a document focuses on a light-receiving part of a sensor IC with different conjugate lengths, due to color aberration of the rod-lens. Since the wavelength of the infrared light is relatively long, the deterioration of the reading resolution appears to be extensive. Here, when reading a document such as a valuable security or a paper bill, a defocusing phenomenon has been prevented, and when reading by infrared light, a high accurate reading characteristic has been realized. As a solution, light is irradiated from a light output window (101a) of a light source (101) and reflected by a document (8), and an infrared light shielding area is provided on a bottom face of a glass (51) placed in an optical path of the light reflected by the document (8), between the document (8) and a sensor IC (3).
摘要:
A resist underlayer film forming composition for lithography, includes: a polymer including a structure of formula (1) below at a terminal of a polymer chain; a cross-linking agent; a compound that promotes a cross-linking reaction; and an organic solvent: (where R1, R2, and R3 are each independently a hydrogen atom, a linear or branched hydrocarbon group having a carbon atom number of 1 to 13, or a hydroxy group; at least one of R1, R2, and R3 is the hydrocarbon group; m and n are each independently 0 or 1; and a main chain of the polymer is bonded to a methylene group when n is 1 and bonded to a group represented by —O— when n is 0).
摘要:
It is an object to provide a resist underlayer film forming composition having a large selection ratio of a dry etching rate, and having a k value and an n value at a short wavelength such as an ArF excimer laser, both of which exhibit desired values. There is provided a resist underlayer film forming composition containing a polymer obtained by reacting at least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups with an organic solvent containing an alcohol-based compound having an OH group, and a solvent.
摘要:
There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
摘要:
An image reading device having a compact plane-shaped illumination portion is provided, by which a portion of a target to be light-irradiated can be irradiated with light whose oblique angles are different from each other, and a transmission part of the target can be read. The image reading device includes a conveying means for conveying in a conveying direction a target to be light-irradiated including a transparent portion, a lens assembly, arranged on one side of the target, for focusing transmission light having passed through the transparent portion of the target, a sensor for receiving the transmission light focused by the lens assembly, a light source, positioned on the other side of the target, arranged in a main-scanning direction, and a light guide for guiding light from the light source in a sub-scanning direction, and the light guide having a reflective portion for reflecting the guided light and then irradiating a portion to be irradiated with the reflected light.
摘要:
There is provided a composition for forming a resist underlayer film not only having a large selection ratio of a dry etching rate but also exhibiting desired values of the k value and of the refractive index n at a short wavelength such as a wavelength of an ArF excimer laser. A resist underlayer film forming composition for lithography comprising: a linear polymer; and a solvent, wherein a backbone of the linear polymer has a unit structure in which 2,4-dihydroxy benzoic acid is introduced through an ester bond and an ether bond.
摘要:
An image reading apparatus includes a carrying unit that carries an irradiated object having a reflecting portion and a transmitting portion in a carrying direction, a first light source arranged on one face side of the irradiated object that irradiates light to an irradiated portion in a path of carrying the irradiated object, a second light source arranged on other face side that irradiates light to the irradiated portion, a detecting unit arranged to be spaced apart from the irradiated portion by a predetermined distance that detects the transmitting portion, a lighting control unit that controls to put on the second light source during a time period of passing the transmitting portion through the irradiated portion, a lens array arranged on one face side of the irradiated object that converges reflecting light reflected by the reflecting portion and transmitting light, and a sensor that receives converged light.
摘要:
There is provided a resist underlayer film composition for EUV lithography that is used in a device production process using EUV lithography, reduces adverse effects of EUV, and is effective for obtaining a good resist pattern, and to a method for forming a resist pattern that uses the resist underlayer film composition for EUV lithography. A resist underlayer film-forming composition for EUV lithography, including: a polymer having a repeating unit structure of formula (1): [where each of A1, A2, A3, A4, A5, and A6 is a hydrogen atom, a methyl group, or an ethyl group; X1 is formula (2), formula (3), formula (4), or formula (0): Q is formula (5) or formula (6): and a solvent. A resist underlayer film-forming composition for EUV lithography, comprising: the polymer having the repeating unit structure of formula (1); a crosslinkable compound; and a solvent.
摘要:
There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.