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公开(公告)号：US12096355B2
公开(公告)日：2024-09-17
申请号：US17730794
申请日：2022-04-27
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao , Lin Liu , Yifan Wang
CPC classification number: H04W52/0206 , H04W52/18
Abstract: Embodiments provide a power adjustment method and an access network device, and the embodiments relate to the field of communication technologies. A target power increase value is adaptively determined based on a target key characteristic of a target cell, so that a cell coverage loss and a cell capacity loss caused by channel shutdown are compensated for, and a good energy-saving effect is obtained. The access network device blocks transmit channels that are of some of a plurality of antennas and that correspond to the target cell. Then, the access network device obtains the target key characteristic of the target cell, and determines the target power increase value based on the target key characteristic. The access network device increases, based on the target power increase value, transmit power of the access network device corresponding to the target cell or a target user.
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公开(公告)号：US12064939B2
公开(公告)日：2024-08-20
申请号：US17567576
申请日：2022-01-03
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Chenxin Ouyang , Zhongzhi Tang , Wangchun Lyu , Jing Zhao
CPC classification number: B32B17/10 , B32B7/12 , B32B27/08 , B32B27/281 , B32B27/283 , B32B27/308 , B32B27/325 , B32B27/36 , B32B27/365 , B32B2255/20 , B32B2255/26 , B32B2270/00 , B32B2307/412 , B32B2307/536 , B32B2307/558 , B32B2307/732 , B32B2457/20
Abstract: The present disclosure provides example flexible display cover, module, and apparatus. One example cover covers a flexible display. The flexible display cover includes a glass layer and a hardened layer that are superposed. The hardened layer is located on a side of the glass layer away from the flexible display.
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公开(公告)号：US11147019B2
公开(公告)日：2021-10-12
申请号：US16716807
申请日：2019-12-17
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao , Qiang Wang , Haibing Cao , Yinghua Huang
Abstract: Embodiments of this application provide a hyper system frame number determining method, a communication method and apparatus. The method includes the following steps. First, determining, by an access network device, a first hyper system frame number (HSFN) and a first system frame number SFN, where the first HSFN and the first SFN are determined by the access network device based on a time at which enhanced discontinuous reception (eDRX) is enabled and a preconfigured time. Second, determining, by the access network device, an HSFN adjustment value based on the first SFN and a second SFN, where the second SFN is an SFN used at the time at which the access network device enables the eDRX. Third, adjusting, by the access network device, the first HSFN to a second HSFN based on the HSFN adjustment value, and updating the second HSFN based on the second SFN.
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公开(公告)号：US10820273B2
公开(公告)日：2020-10-27
申请号：US15568697
申请日：2015-06-30
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao , Guanghua Zhong
Abstract: Embodiments of the present invention provide a method for interaction between a terminal and a network device, including: sending, by a terminal, a first heartbeat to a network device; receiving, by the terminal, a first heartbeat response returned by the network device; if a screen of the terminal is in an off state, and optionally, the off state lasts for a preset period of time, releasing network link resources of a connection between the terminal and the network device, and/or prohibiting a background application of the terminal from accessing the network device, and/or disabling a data service of the terminal; before the terminal sends a second heartbeat to the network device, restoring, by the terminal, a status of network connection to a normal connection state; sending, by the terminal, the second heartbeat to the network device; and receiving, by the terminal, a second heartbeat response returned by the network device.
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公开(公告)号：US10720111B2
公开(公告)日：2020-07-21
申请号：US16067006
申请日：2015-12-31
Applicant: Huawei Technologies Co., Ltd.
Inventor： Fanfan Zhao , Jing Zhao
IPC: G09G3/34 , G09G3/36 , G06F1/3234 , G06F3/041
Abstract: This application provides a display screen backlight control method, a display screen backlight control apparatus, and a terminal. The method includes determining a backlight to-be-switched-on region of a display screen according to an operation on the display screen, determining a specified to-be-lighted light source according to the backlight to-be-switched-on region, and lighting the specified to-be-lighted light source and illuminating at least the backlight to-be-switched on region of the display screen while maintaining other light sources associated with region outside of the backlight to-be-switched-on region in an unilluminated state.
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Patent Agency Ranking
公开(公告)号：US10483381B2
公开(公告)日：2019-11-19
申请号：US16024562
申请日：2018-06-29
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao , Chen-Xiong Zhang
IPC: H01L29/66 , H01L21/8234 , H01L23/535 , H01L27/06 , H01L27/088 , H01L49/02 , H01L29/06
Abstract: A semiconductor device and a method for fabricating a semiconductor device are disclosed. The semiconductor device includes a tunnel field-effect transistor and a planar device. The tunnel field-effect transistor includes a first substrate and a first electrical element, and the first electrical element is formed on one side of the first substrate; the planar device includes a second substrate and a second electrical element, the second substrate and the first substrate are an integrated structure and form a main substrate, the second electrical element is formed on one side of the second substrate, and the second electrical element and the first electrical element are disposed on a same side of the main substrate; and the planar device includes any one of a metal oxide semiconductor transistor, a capacitor, and a resistor.
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公开(公告)号：US20150228764A1
公开(公告)日：2015-08-13
申请号：US14585615
申请日：2014-12-30
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao
CPC classification number: H01L29/66795 , H01L21/28008
Abstract: A method for producing a multi-gate fin field-effect transistor (FinFET) is provided. The method includes forming a channel layer and a gate medium layer on a substrate; forming an amorphous silicon layer on the substrate, and etching the amorphous silicon layer, to form at least one fin; forming, by using an epitaxial growth process, a first protective layer from both sides to the middle of the substrate along a length direction of the at least one fin until a groove is formed in a middle location along the length direction of the at least one fin; forming a gate electrode layer on the substrate, performing planarization processing on the gate electrode layer to expose the first protective layer, and etching away the first protective layer by using an etching process, so as to form a gate electrode; and forming a source electrode and a drain electrode on the substrate.
Abstract translation: 提供一种制造多栅极鳍场效应晶体管（FinFET）的方法。 该方法包括在衬底上形成沟道层和栅介质层; 在所述衬底上形成非晶硅层，并蚀刻所述非晶硅层以形成至少一个鳍; 通过使用外延生长工艺沿着所述至少一个翅片的长度方向形成从所述基板的两侧到所述中间的第一保护层，直到沿着所述至少一个翅片的长度方向在中间位置形成凹槽 鳍; 在所述基板上形成栅极电极层，对所述栅极电极层进行平坦化处理以使所述第一保护层露出，并且通过使用蚀刻工艺蚀刻掉所述第一保护层，以形成栅电极; 以及在所述衬底上形成源电极和漏电极。
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公开(公告)号：US11895512B2
公开(公告)日：2024-02-06
申请号：US17388560
申请日：2021-07-29
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao , Huisheng Li
Abstract: The present disclosure discloses example communication method and apparatus. One example method includes a first network device receiving first state information from at least one second network device, where the first state information indicates whether the at least one second network device is capable of providing a service in a next state. Third state information of the at least one second network device is received, where the third state information indicates a current state of the at least one second network device and includes user state information corresponding to at least a portion of a plurality of beamforming weight directions of the at least one second network device. A network topology is determined based on at least the first state information and the third state information, and after the first network device and the at least one second network device in a next state are networked.
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公开(公告)号：US20200245252A1
公开(公告)日：2020-07-30
申请号：US16754035
申请日：2017-10-13
Applicant: HUAWEI TECHNOLOGIES CO., LTD.
Inventor： Jing Zhao
IPC: H04W52/02 , G06F1/3206
Abstract: This application discloses a method for reducing power consumption of a terminal, and a terminal, and relates to the field of terminal technologies, to resolve a problem of relatively high power consumption of a terminal caused by a background application program. The method includes: when a background power consumption current value of the terminal is greater than a preset current value, controlling, by the terminal, a target application program, to reduce the background power consumption current value, where the background power consumption current value is a sum of power consumption current values of all background application programs on the terminal. The target application program includes at least one or more of the following application programs: a background application program whose use frequency is lower than a preset frequency threshold, a background application program whose power consumption is greater than a preset power consumption threshold, and a background application program with abnormal power consumption. The method is applicable to a process of controlling a background application program.
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公开(公告)号：US09362387B2
公开(公告)日：2016-06-07
申请号：US14585615
申请日：2014-12-30
Applicant: Huawei Technologies Co., Ltd.
Inventor： Jing Zhao
CPC classification number: H01L29/66795 , H01L21/28008
Abstract: A method for producing a multi-gate fin field-effect transistor (FinFET) is provided. The method includes forming a channel layer and a gate medium layer on a substrate; forming an amorphous silicon layer on the substrate, and etching the amorphous silicon layer, to form at least one fin; forming, by using an epitaxial growth process, a first protective layer from both sides to the middle of the substrate along a length direction of the at least one fin until a groove is formed in a middle location along the length direction of the at least one fin; forming a gate electrode layer on the substrate, performing planarization processing on the gate electrode layer to expose the first protective layer, and etching away the first protective layer by using an etching process, so as to form a gate electrode; and forming a source electrode and a drain electrode on the substrate.
Abstract translation: 提供一种制造多栅极鳍场效应晶体管（FinFET）的方法。 该方法包括在衬底上形成沟道层和栅介质层; 在所述衬底上形成非晶硅层，并蚀刻所述非晶硅层以形成至少一个鳍; 通过使用外延生长工艺沿着所述至少一个翅片的长度方向形成从所述基板的两侧到所述中间的第一保护层，直到沿着所述至少一个翅片的长度方向在中间位置形成凹槽 鳍; 在所述基板上形成栅极电极层，对所述栅极电极层进行平坦化处理以使所述第一保护层露出，并且通过使用蚀刻工艺蚀刻掉所述第一保护层，以形成栅电极; 以及在所述衬底上形成源电极和漏电极。
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