公开(公告)号：US20170249818A1

公开(公告)日：2017-08-31

申请号：US15592830

申请日：2017-05-11

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hyun-Tak KIM ,  Bongjun KIM ,  Jong Chan PARK

IPC: G08B17/06 ,  H01L27/02 ,  H01H37/32 ,  H02H9/04 ,  H01C7/04 ,  H01L49/00 ,  H01L27/06

CPC classification number: G08B17/06 ,  H01C1/02 ,  H01C7/047 ,  H01H37/32 ,  H01L27/0248 ,  H01L27/0647 ,  H01L49/003 ,  H02H9/045

Abstract: The inventive concept provides MIT devices molded by clear compound epoxy and fire detecting devices including the MIT device. The fire detecting device is supplied with a power source from a power control device. The fire detecting device includes a MIT device including a MIT chip molded by a clear compound epoxy, a diode bridge circuit supplied with the power source from the power control device for providing a non-polar power source, a notice circuit supplied with the non-polar power source from the diode bridge circuit for warning of a fire alarm in response to a detecting signal from the MIT device, and a stabilization circuit for maintaining the detecting signal for a certain period.

公开(公告)号：US20130292753A1

公开(公告)日：2013-11-07

申请号：US13929831

申请日：2013-06-28

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak KIM ,  Bongjun KIM

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L25/16 ,  H01L27/0248 ,  H01L49/003 ,  H01L2924/0002 ,  H03K17/145 ,  H01L2924/00

Abstract: Provided are a variable field effect transistor (FET) designed to suppress a reduction of current between a source and a drain due to heat while decreasing a temperature of the FET, and an electrical and electronic apparatus including the variable gate FET. The variable gate FET includes a FET and a gate control device that is attached to a surface or a heat-generating portion of the FET and is connected to a gate terminal of the FET so as to vary a voltage of the gate terminal. A channel current between the source and drain is controlled by the gate control device that varies the voltage of the gate terminal when the temperature of the FET increases above a predetermined temperature.

Abstract translation: 提供了一种可变场效应晶体管（FET），其设计成在降低FET的温度的同时抑制源极和漏极之间的电流的降低，以及包括可变栅极FET的电气和电子设备。 可变栅极FET包括FET和栅极控制装置，其连接到FET的表面或发热部分，并且连接到FET的栅极端子，以便改变栅极端子的电压。 源极和漏极之间的沟道电流由栅极控制器控制，栅极控制器件当FET的温度升高到高于预定温度时改变栅极端子的电压。