公开(公告)号：US09899226B2

公开(公告)日：2018-02-20

申请号：US14658121

申请日：2015-03-13

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Ho Kyun Ahn ,  Hae Cheon Kim ,  Jong Won Lim ,  Dong Min Kang ,  Yong Hwan Kwon ,  Seong Il Kim ,  Zin Sig Kim ,  Eun Soo Nam ,  Byoung Gue Min ,  Hyung Sup Yoon ,  Kyung Ho Lee ,  Jong Min Lee ,  Kyu Jun Cho

IPC: H01L29/40 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/778 ,  H01L29/51 ,  H01L29/20 ,  H01L29/45

CPC classification number: H01L21/28264 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/42316 ,  H01L29/4236 ,  H01L29/452 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66462 ,  H01L29/7786

Abstract: Provided herein is a semiconductor device including a substrate; an active layer formed on top of the substrate; a protective layer formed on top of the active layer and having a first aperture; a source electrode, driving gate electrode and drain electrode formed on top of the protective layer; and a first additional gate electrode formed on top of the first aperture, wherein an electric field is applied to the active layer, protective layer and driving gate electrode due to a voltage applied to each of the source electrode, drain electrode and driving gate electrode, and the first additional gate electrode is configured to attenuate a size of the electric field applied to at least a portion of the active layer, protective layer and driving gate electrode.