公开(公告)号：US09209308B2

公开(公告)日：2015-12-08

申请号：US13985196

申请日：2012-11-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xuehui Zhang ,  Xiang Liu ,  Jainshe Xue

IPC: H01L21/84 ,  H01L29/04 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/78678 ,  G02F2001/134372 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/1288 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/78693

Abstract: There is provided a thin film transistor, comprising a substrate (1) and a gate layer (3), a gate insulating layer (4), an active layer (5), an electrode metal layer (8) and a passivation layer (9) which are formed on the substrate (1) in sequence; the electrode metal layer (8) comprises a source electrode (8a) and a drain electrode (8b), which are separated from each other with a channel region being defined therebetween; between the gate layer (3) and the substrate (1), there is formed a first transparent conductive layer (2); between the active layer (5) and the electrode metal layer (8), there is formed a second transparent conductive layer (7). The transparent conductive layers (2, 7) are added so that adhesive force between the gate metal layer (3) and the substrate (1) is enhanced, diffusion of the electrode metal to the active layer (5) is prevented.

Abstract translation: 提供一种薄膜晶体管，其包括基板（1）和栅极层（3），栅极绝缘层（4），有源层（5），电极金属层（8）和钝化层（9） ），其顺序形成在基板（1）上; 所述电极金属层（8）包括源电极（8a）和漏电极（8b），所述源极电极（8a）和漏极电极（8b）彼此分离，沟道区域被限定在其间; 在栅极层（3）和基板（1）之间形成有第一透明导电层（2）; 在活性层（5）和电极金属层（8）之间形成有第二透明导电层（7）。 添加透明导电层（2,7），使得栅极金属层（3）和基板（1）之间的粘合力增强，从而防止了电极金属向有源层（5）的扩散。