公开(公告)号：US20240243206A1

公开(公告)日：2024-07-18

申请号：US18686604

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Xiaolong Wang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/66742

Abstract: A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.