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1.
公开(公告)号:US11217723B2
公开(公告)日:2022-01-04
申请号:US16712075
申请日:2019-12-12
Applicant: BOE Technology Group Co., Ltd.
Inventor: Pinfan Wang , Shantao Chen , Shuai Zhang , Ming Liu , Qiuhua Meng
IPC: H01L33/00 , H01L25/075 , G06F1/16
Abstract: The present disclosure provides a flexible display substrate, a method for manufacturing the same, and a flexible display device, and belongs to the technical field of display. Among them, the method for manufacturing a flexible display substrate includes: providing a carrier substrate; forming a flexible display substrate including a plurality of pre-cuts on the carrier substrate, with the plurality of pre-cuts exposing the carrier substrate; forming an inverted frustum structure on the carrier substrate at the plurality of pre-cuts, an orthogonal projection of a lower end surface of the inverted frustum structure on the carrier substrate is located within an orthogonal projection of an upper end surface of the inverted frustum structure on the carrier substrate; packaging the flexible display substrate; and peeling the flexible display substrate packaged from the carrier substrate.
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2.
公开(公告)号:US20210384224A1
公开(公告)日:2021-12-09
申请号:US16493096
申请日:2019-03-21
Applicant: BOE Technology Group Co., Ltd.
Inventor: Hongwei Tian , Yanan Niu , Chunyang Wang , Dong Li , Zheng Liu , Shuai Zhang
IPC: H01L27/12
Abstract: A display substrate having a display area and a gate-on-array (GOA) area outside the display area is provided. The display substrate includes a base substrate a light shielding layer on the base substrate; an insulating layer on a side of the light shielding layer away from the base substrate; and a GOA signal line on a side of the insulating layer away from the light shielding layer, and is connected electrically in parallel with a first part of the light shielding layer, the first part being in the GOA area. The display substrate includes a plurality of first vias extending through the insulating layer in the GOA area. The GOA signal line is electrically connected to the first part of the light shielding layer through the plurality of first vias respectively, thereby connecting the GOA signal line and the first part of the light shielding layer electrically in parallel.
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公开(公告)号:US20180083051A1
公开(公告)日:2018-03-22
申请号:US15527792
申请日:2016-10-19
Applicant: BOE Technology Group Co., Ltd.
Inventor: Yu-Cheng Chan , Shuai Zhang , Qi Liu
IPC: H01L27/12 , H01L21/66 , H01L29/786
CPC classification number: H01L27/1296 , G02F1/1362 , G02F2001/136254 , H01L21/77 , H01L22/12 , H01L22/34 , H01L23/544 , H01L27/12 , H01L27/1222 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/78675
Abstract: The present disclosure provides a test element unit, an array substrate, a display panel, a display apparatus and a corresponding manufacturing method. The test element unit includes: a plurality of layers of test patterns, each layer of test pattern including at least one test block and at least one capacitor being formed between test blocks located in different layers, and, two electrodes of each of capacitors being two test blocks located in different layers, respectively, so that it can determined whether or not corresponding components and devices formed in the display region meet requirements by detecting the test patterns formed in the test region.
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公开(公告)号:US11244964B2
公开(公告)日:2022-02-08
申请号:US16097938
申请日:2018-01-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shuai Zhang
Abstract: The present disclosure relates to a display device, an array substrate and a manufacturing method thereof, and relates to the technical field of display. The method includes steps of: providing a base substrate, and forming a semiconductor pattern, a gate insulation layer, a gate electrode, an insulation layer and a source/drain electrode on the base substrate, and further includes forming the composite material layer on the base substrate including the semiconductor pattern, and hydrotreating the composite material layer, in which the composite material layer may contain titanium complex-graphene oxide. The present disclosure is capable of omitting the interlayer insulation layer, thereby avoiding the situation that a flexible layer cannot be displayed due to the breakage of insulation layer between inorganic layers, thereby improving bending performance of the flexible screen.
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公开(公告)号:US10915211B2
公开(公告)日:2021-02-09
申请号:US16419351
申请日:2019-05-22
Applicant: BOE Technology Group Co., Ltd.
Inventor: Shuai Zhang
Abstract: The disclosure discloses a touch panel, a method for fabricating the same, and a touch device; where the touch panel includes: a buffer layer with protrusions, overlapping components, a first insulation layer, and touch electrodes, which are arranged on a substrate in that order, where the touch electrodes overlap with the overlapping components through via-holes extending through the first insulation layer, and at least portions, of the overlapping components, overlapping with the touch electrodes are on the protrusions.
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公开(公告)号:US10886482B2
公开(公告)日:2021-01-05
申请号:US16452946
申请日:2019-06-26
Applicant: BOE Technology Group Co., Ltd.
Inventor: Shuai Zhang , Xiaolong Li , Yueping Zuo , Shantao Chen , Qiuhua Meng , Ming Liu
IPC: H01L51/00 , H01L51/52 , H01L27/32 , H01L33/12 , H01L29/78 , C08L63/00 , G03F7/00 , H05K1/02 , B82Y10/00 , B82Y40/00
Abstract: A flexible display panel, a manufacturing method thereof and a display device are provided. The flexible display panel includes: a flexible substrate, a first metal layer formed on the substrate, an insulation layer overlying the first metal layer, and a second metal layer disposed on the insulation layer, wherein a plurality of via holes are provided in the insulation layer, the inner wall of each via hole is covered by a stress buffer layer and the second metal layer is formed on the stress buffer layer and connected to the first metal layer through the via holes.
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公开(公告)号:US11244969B2
公开(公告)日:2022-02-08
申请号:US16509548
申请日:2019-07-12
Applicant: BOE Technology Group Co., Ltd.
Inventor: Xueyan Tian , Zheng Liu , Shuai Zhang
IPC: H01L27/12 , H01L27/32 , H01L23/498 , H01L51/00 , H01L51/56
Abstract: The present disclosure discloses an array substrate, a manufacturing method thereof, a display substrate, and a display device, belonging to the technical field of display. The array substrate includes: a flexible base, and, a TFT and a connecting line which are on a side of the flexible base. The array substrate has a display area and a lead area. The TFT is in the display area. The connecting line is in the lead area. The connecting line is used to electrically connect the TFT to a drive circuit. A manufacturing material of the connecting line includes a flexible conductive material. Since the material forming the connecting line includes a flexible conductive material, and the flexible conductive material has electrical conductivity and is not easily broken, the breaking probability of the connecting line is reduced, and the yield of the display device is effectively improved.
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公开(公告)号:US20200098847A1
公开(公告)日:2020-03-26
申请号:US16419234
申请日:2019-05-22
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shuai Zhang , Libin Liu , Yueping Zuo , Qiuhua Meng
Abstract: The present disclosure provides a display substrate, a method for manufacturing the same, and a display device. The display substrate comprises a display region, and a peripheral circuit located on a periphery of the display region and provided with a signal line. The display substrate further comprises at least one conductive pattern located on a thin film encapsulation layer of the display substrate and connected in substantially parallel to the signal line.
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9.
公开(公告)号:US10304963B2
公开(公告)日:2019-05-28
申请号:US15083646
申请日:2016-03-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Xiaoyong Lu , Dong Li , Zheng Liu , Shuai Zhang , Liang Sun , Chunping Long
IPC: H01L29/786 , H01L29/66 , H01L21/265
Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.
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公开(公告)号:US10243004B2
公开(公告)日:2019-03-26
申请号:US15540112
申请日:2016-11-01
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shuai Zhang , Yucheng Chan
IPC: H01L29/786 , H01L27/12 , H01L21/02 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/49
Abstract: Disclosed are a low-temperature polycrystalline silicon thin film transistor (LTPS TFT), a method for fabricating the same, an array substrate, a display panel, and a display device. The LTPS TFT includes an active layer, a source, a drain, a gate, and a gate insulating layer which are arranged on a substrate. The gate insulating layer is arranged between the active layer and the gate, and a graphene oxide layer which is arranged between the active layer and the gate insulating layer. Since the graphene oxide layer is arranged between the active layer and the gate insulating layer, the interface between the active layer and the gate insulating layer of polycrystalline (P-Si) has a reduced roughness and interfacial defect density, and a pre-cleaning process is not necessary for the gate insulating layer.
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