公开(公告)号：US20220108914A1

公开(公告)日：2022-04-07

申请号：US17398899

申请日：2021-08-10

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Shashank SHARMA ,  Abhilash J. MAYUR ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/768 ,  H01L27/108

Abstract: Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.

公开(公告)号：US20210280418A1

公开(公告)日：2021-09-09

申请号：US17123386

申请日：2020-12-16

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER ,  Zeqiong ZHAO

IPC: H01L21/02 ,  H01L27/11556

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.

公开(公告)号：US20240087889A1

公开(公告)日：2024-03-14

申请号：US18513008

申请日：2023-11-17

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/02 ,  H01L21/30 ,  H10B41/27

CPC classification number: H01L21/02667 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/3003 ,  H10B41/27 ,  H01L21/02164 ,  H01L21/02532 ,  H10B43/27

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.

公开(公告)号：US20220251708A1

公开(公告)日：2022-08-11

申请号：US17582980

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Zhi LIU ,  Abhilash J. MAYUR ,  Norman L. TAM

IPC: C23C16/56 ,  H01L21/02 ,  B08B7/00 ,  C23C16/44

Abstract: Apparatus, methods, and systems use hydrogen radicals during a thermal annealing of film stacks to reduce or remove contaminants (such as phosphorus) from the film stacks. In one implementation, a method of processing a film stack of a substrate, includes conducting a thermal anneal operation on the film stack while the substrate is directly supported on a pedestal heater. The thermal anneal operation includes reducing one or more of a stress or a bow of the film stack. The method includes conducting a radical treatment operation on the film stack after the thermal anneal operation is conducted. The radical treatment operation includes exposing the film stack to hydrogen radicals, and removing contaminant particles from the film stack.

公开(公告)号：US20210280428A1

公开(公告)日：2021-09-09

申请号：US17174395

申请日：2021-02-12

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Abhilash J. MAYUR ,  Shashank SHARMA ,  Norman L. TAM ,  Matthew SPULLER

IPC: H01L21/30 ,  H01L21/02

Abstract: The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume. The substrate includes a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method includes forming a silicon-containing layer over the channel structure to a hydrogen-or-deuterium plasma in the first processing volume at a flow rate of about 10 sccm to about 5000 sccm. The substrate is maintained at a temperature of about 100° C. to about 1100° C. during the exposing, the exposing forming a nucleated substrate. Subsequent to the exposing a thermal anneal operation is performed on the substrate.