公开(公告)号：US20220251708A1

公开(公告)日：2022-08-11

申请号：US17582980

申请日：2022-01-24

Applicant: Applied Materials, Inc.

Inventor： Xinming ZHANG ,  Zhi LIU ,  Abhilash J. MAYUR ,  Norman L. TAM

IPC: C23C16/56 ,  H01L21/02 ,  B08B7/00 ,  C23C16/44

Abstract: Apparatus, methods, and systems use hydrogen radicals during a thermal annealing of film stacks to reduce or remove contaminants (such as phosphorus) from the film stacks. In one implementation, a method of processing a film stack of a substrate, includes conducting a thermal anneal operation on the film stack while the substrate is directly supported on a pedestal heater. The thermal anneal operation includes reducing one or more of a stress or a bow of the film stack. The method includes conducting a radical treatment operation on the film stack after the thermal anneal operation is conducted. The radical treatment operation includes exposing the film stack to hydrogen radicals, and removing contaminant particles from the film stack.