公开(公告)号：US20200234982A1

公开(公告)日：2020-07-23

申请号：US16838128

申请日：2020-04-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20170092511A1

公开(公告)日：2017-03-30

申请号：US15013547

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Saptarshi BASU ,  Jeongmin LEE ,  Paul CONNORS ,  Dale R. DU BOIS ,  Prashant Kumar KULSHRESHTHA ,  Karthik Thimmavajjula NARASIMHA ,  Brett BERENS ,  Kalyanjit GHOSH ,  Jianhua ZHOU ,  Ganesh BALASUBRAMANIAN ,  Kwangduk Douglas LEE ,  Juan Carlos ROCHA-ALVAREZ ,  Hiroyuki OGISO ,  Liliya KRIVULINA ,  Rick GILBERT ,  Mohsin WAQAR ,  Venkatanarayana SHANKARAMURTHY ,  Hari K. PONNEKANTI

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/3244 ,  H01J37/32633 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/6708 ,  H01L21/67201 ,  H01L21/68785

Abstract: Implementations disclosed herein describe a bevel etch apparatus within a loadlock bevel etch chamber and methods of using the same. The bevel etch apparatus has a mask assembly within the loadlock bevel etch chamber. During an etch process, the mask assembly delivers a gas flow to control bevel etch without the use of a shadow frame. As such, the edge exclusion at the bevel edge can be reduced, thus increasing product yield.

公开(公告)号：US20180330951A1

公开(公告)日：2018-11-15

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Jiarui WANG ,  Kwangduk Douglas LEE ,  Milind GADRE ,  Xiaoquan MIN ,  Paul CONNORS

IPC: H01L21/225 ,  G03F1/38

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.

公开(公告)号：US20170365450A1

公开(公告)日：2017-12-21

申请号：US15625721

申请日：2017-06-16

Applicant: Applied Materials, Inc.

Inventor： Feng BI ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas Lee ,  Paul CONNORS

IPC: H01J37/32 ,  B08B7/00

Abstract: Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.

公开(公告)号：US20170178758A1

公开(公告)日：2017-06-22

申请号：US15369219

申请日：2016-12-05

Applicant: Applied Materials, Inc.

Inventor： Sungwon HA ,  Paul CONNORS ,  Jianhua ZHOU ,  Juan Carlos ROCHA-ALVAREZ ,  Kwangduk Douglas LEE ,  Ziqing DUAN ,  Nicolas J. BRIGHT ,  Feng BI

IPC: G21F3/00 ,  C23C16/458 ,  C23C16/50 ,  C23C16/448

CPC classification number: C23C16/448 ,  C23C16/50 ,  H01J37/32724 ,  H01L21/67115 ,  H01L21/6719

Abstract: The present disclosure generally relates to a radiation shield for a process chamber which improves substrate temperature uniformity. The radiation shield may be disposed between a slit valve door of the process chamber and a substrate support disposed within the process chamber. In some embodiments, the radiation shield may be disposed under a heater of the process chamber. Furthermore, the radiation shield may block radiation and/or heat supplied from the process chamber, and in some embodiments, the radiation shield may absorb and/or reflect radiation, thus providing improved temperature uniformity as well as improving a planar profile of the substrate.