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    Automatic electrostatic chuck bias compensation during plasma processing
    2.
    发明授权
    Automatic electrostatic chuck bias compensation during plasma processing 有权

    公开(公告)号：US11948780B2

    公开(公告)日：2024-04-02

    申请号：US17319013

    申请日：2021-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers ,  Leonid Dorf

    IPC: H01J37/32 ,  H01L21/683

    CPC classification number: H01J37/32715 ,  H01J37/32146 ,  H01J37/32568 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3341

    Abstract: Embodiments of the present disclosure relate to a system for pulsed direct-current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

    Temperature and bias control of edge ring
    3.
    发明授权
    Temperature and bias control of edge ring 有权

    公开(公告)号：US11810768B2

    公开(公告)日：2023-11-07

    申请号：US17351977

    申请日：2021-06-18

    Applicant: Applied Materials, Inc.

    Inventor： James Rogers ,  Linying Cui ,  Rajinder Dhindsa

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

    CPC classification number: H01J37/32642 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68721 ,  H01J2237/2001

    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

    Plasma uniformity control in pulsed DC plasma chamber
    4.
    发明授权
    Plasma uniformity control in pulsed DC plasma chamber 有权

    公开(公告)号：US12148595B2

    公开(公告)日：2024-11-19

    申请号：US17537328

    申请日：2021-11-29

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers

    IPC: H01J37/32

    Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems and methods for the plasma processing of a substrate in a processing chamber. In some embodiments, aspects of the apparatus and methods are directed to improving process uniformity across the surface of the substrate, reducing defectivity on the surface of the substrate, or both. In some embodiments, the apparatus and methods provide for improved control over the uniformity of a plasma formed over the edge of a substrate and/or the distribution of ion energies at the surface of the substrate. The improved control over the plasma uniformity may be used in combination with substrate handling methods, e.g., de-chucking methods, to reduce particulate-related defectivity on the surface of the substrate. In some embodiments, the improved control over the plasma uniformity is used to preferentially clean accumulated processing byproducts from portions of the edge ring during an in-situ plasma chamber cleaning process.

    Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device
    5.
    发明授权
    Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device 有权

    公开(公告)号：US11367593B2

    公开(公告)日：2022-06-21

    申请号：US16994190

    申请日：2020-08-14

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers

    IPC: H01J37/32

    Abstract: The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed RF power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a radio frequency (RF) circuit including a first variable capacitor coupled to the edge ring electrode.

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