公开(公告)号：US20240087955A1

公开(公告)日：2024-03-14

申请号：US18241343

申请日：2023-09-01

Applicant: Applied Materials, Inc.

Inventor： Yi XU ,  Xianyuan ZHAO ,  Zhimin QI ,  Aixi ZHANG ,  Geraldine VASQUEZ ,  Dien-Yeh WU ,  Wei LEI ,  Xingyao GAO ,  Shirish PETHE ,  Wenting HOU ,  Chao DU ,  Tsung-Han YANG ,  Kyoung-Ho BU ,  Chen-Han LIN ,  Jallepally RAVI ,  Yu LEI ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76876

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.